Leakage Current Reduction in Planar AlGaN/GaN MISHEMT with Drain Surrounded by the Gate Channel

被引：0

作者：

Sun, Hui ^{[1
]}

Chen, Jianguo ^{[1
]}

Wang, Maojun ^{[1
]}

Liu, Meihua ^{[1
]}

Lin, Xinnan ^{[1
]}

Chen, Dongmin ^{[1
]}

机构：

[1] Peking Univ, Chen Acad Adv Interdisciplinary Studies, 5 Yiheyuan Rd, Beijing 100871, Peoples R China

来源：

2017 14TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING (SSLCHINA) : INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS (IFWS) | 2017年

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A new planar MISHEMT structure is proposed with the drain surrounded (D-S) by the gate channel. The gate channel serves as the stop-ring of the drain voltage, eliminating the damages from the high voltage on the mesa edge and isolation area. As a result, the leakage of the D-S MISHEMT is found to be reduced by almost 3 orders comparing with the source surrounded (S-S) MISHEMT. A saturated output current density of 740 mA/mm and an ON-resistance of 13.09 Omega.mm are obtained for device with LG/LGS/LGD/WC = 1.5/5/20/250 mu m. Meanwhile, the degradation of dynamic ON-resistance and off-state breakdown performance are investigated in both D-S and S-S MISHEMT, which indicates excellent reliability of the D-S MISHEMT.

引用

页码：186 / 188

页数：3

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