An Oxygen Gettering Scheme for Improving Device Mobility and Subthreshold Swing of InGaZnO-Based Thin-Film Transistor

被引：14

作者：

Hsu, Hsiao-Hsuan ^{[1
]}

Chang, Chun-Yen ^{[1
]}

Cheng, Chun-Hu ^{[2
]}

Chiou, Shan-Haw ^{[3
]}

Huang, Chiung-Hui ^{[3
]}

Chiu, Yu-Chien ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

[2] Natl Taiwan Normal Univ, Dept Mechatron Technol, Taipei 10610, Taiwan

[3] Ind Technol Res Inst, Mat & Chem Res Lab, Hsinchu 31040, Taiwan

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2014年 / 13卷 / 05期

关键词：

Gettering; InGaZnO (IGZO); thin-film transistor (TFT); titanium oxide (TiOx); GATE DIELECTRICS; ZINC-OXIDE;

D O I：

10.1109/TNANO.2014.2332395

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This study involved developing a low-power and high-mobility metal-oxide thin-film transistor that incorporated a bilayer IGZO/IGZO:Ti semiconductor material. Compared with control metal-oxide TFTs, the bilayer IGZO TFT through thickness modulation of IGZO: Ti can reach the smallest subthreshold swing (85 mV/decade) and the highest field effect mobility (49 cm(2)/Vs) at a drive voltage of <3 V. This performance level improvement can be attributed to the gettering effect caused by the IGZO: Ti capping layer and its dual advantages, which enhance device mobility and improve gate swing.

引用

页码：933 / 938

页数：6

共 50 条

[1] Low-Voltage-Driven Flexible InGaZnO Thin-Film Transistor With Small Subthreshold Swing
Su, Nai-Chao
Wang, Shui-Jinn
Huang, Chin-Chuan
Chen, Yu-Han
Huang, Hao-Yuan
Chiang, Chen-Kuo
Chin, Albert
[J]. IEEE ELECTRON DEVICE LETTERS, 2010, 31 (07) : 680 - 682
[2] Abnormal Subthreshold Swing Decrease in a-InGaZnO Thin-Film Transistor After Self-Heating Stress
Kuo, Chuan-Wei
Chang, Ting-Chang
Chen, Jian-Jie
Zhou, Kuan-Ju
Tsai, Tsung-Ming
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (12) : 6789 - 6793
[3] High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOx Dielectric With Ultralow Subthreshold Swing
Zhu, Li
He, Yongli
Chen, Chunsheng
Wang, Xiangjing
Zhu, Ying
Zhu, Yixin
Mao, Huiwu
Wan, Changjin
Wan, Qing
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (12) : 6154 - 6158
[4] Low Subthreshold Swing and High Performance of Ultrathin PEALD InGaZnO Thin-Film Transistors
Jeong, Seok-Goo
Jeong, Hyun-Jun
Park, Jin-Seong
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (04) : 1670 - 1675
[5] Steep Subthreshold Swing and Enhanced Illumination Stability InGaZnO Thin-Film Transistor by Plasma Oxidation on Silicon Nitride Gate Dielectric
Liu, Yiming
Liu, Chang
Qin, Houyun
Peng, Chong
Lu, Mingxin
Chen, Zhanguo
Zhao, Yi
[J]. MEMBRANES, 2021, 11 (11)
[6] Testing of flexible InGaZnO-based thin-film transistors under mechanical strain
Muenzenrieder, N. S.
Cherenack, K. H.
Troester, G.
[J]. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2011, 55 (02):
[7] Device Characterization and Design Guideline of Amorphous InGaZnO Junctionless Thin-Film Transistor
Kim, Sang Min
Yu, Chong Gun
Cho, Won-Ju
Park, Jong Tae
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (06) : 2526 - 2532
[8] The Effect of Sampling Interval and Various Difference Approximation Methods on Extracting the Subthreshold Swing in InGaZnO Thin Film Transistor
Liu, Chang
Liu, Yiming
Wei, Song
Zhao, Yi
[J]. IEEE ACCESS, 2021, 9 : 86677 - 86684
[9] High-mobility and low subthreshold swing amorphous InGaZnO thin-film transistors by in situ H2 plasma and neutral oxygen beam irradiation treatment
Wu, Chien-Hung
Mohanty, Srikant Kumar
Huang, Bo-Wen
Chang, Kow-ming
Wang, Shui-Jinn
Ma, Kung-jeng
[J]. NANOTECHNOLOGY, 2023, 34 (17)
[10] Impact of Interfacial Trap Density of States on the Stability of Amorphous InGaZnO-Based Thin-Film Transistors
Huang Xiao-Ming
Wu Chen-Fei
Lu Hai
Xu Qing-Yu
Zhang Rong
Zheng You-Dou
[J]. CHINESE PHYSICS LETTERS, 2012, 29 (06)

← 1 2 3 4 5 →