Impact of Interfacial Trap Density of States on the Stability of Amorphous InGaZnO-Based Thin-Film Transistors

被引：11
|
作者：
Huang Xiao-Ming [1 ,2 ]
Wu Chen-Fei [1 ,2 ]
Lu Hai [1 ,2 ]
Xu Qing-Yu [3 ]
Zhang Rong [1 ,2 ]
Zheng You-Dou [1 ,2 ]
机构：
[1] Nanjing Univ, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China
[2] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China
[3] Southeast Univ, Dept Phys, Nanjing 211189, Jiangsu, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2012年 / 29卷 / 06期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1088/0256-307X/29/6/067302
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The impact of interfacial trap states on the stability of amorphous indium-gallium-zinc oxide thin film transistors is studied under positive gate bias stress. With increasing stress time, the device exhibits a large positive drift of threshold voltage while maintaining a stable sub-threshold swing and a constant field-effect mobility of channel electrons. The threshold voltage drift is explained by charge trapping at the high-density trap states near the channel/dielectric interface, which is confirmed by photo-excited charge-collection spectroscopy measurement.
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页数：4
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