Digital class E power amplifier for the RF band

被引：5
|
作者：
Abu-Nimeh, Faisal T. [1 ]
Salem, Fathi A. [1 ]
机构：
[1] Michigan State Univ, Dept Elect & Comp Engn, E Lansing, MI 48824 USA
来源：
IEEE ICMA 2006: PROCEEDING OF THE 2006 IEEE INTERNATIONAL CONFERENCE ON MECHATRONICS AND AUTOMATION, VOLS 1-3, PROCEEDINGS | 2006年
关键词：
D O I：
10.1109/ICMA.2006.257405
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
The paper describes a digital approach to adjust (in controlled fashion) the output power of an RF circuit using 0.5um digital CMOS technology. This circuit would serve as power driver that minimizes the wasted power and maximizes the delivered power to the load. The power amplifier consists of an array of parallel NMOS transistors connected to an (all-on-chip) Modified class E Power Amplifier. The overall circuit functions as a direct digital to RF filtered amplitude converter. The results show that the maximum output power achieved is 8 dBm using a 3V power supply and occupying 0.18.um(2).
引用
收藏
页码：1548 / +
页数：2
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