PECVD Intermediate and Absorber Layers Applied in Liquid-Phase Crystallized Silicon Solar Cells on Glass Substrates

被引：25

作者：

Gabriel, Onno ^{[1
]}

Frijnts, Tim ^{[2
]}

Calnan, Sonya ^{[1
]}

Ring, Sven ^{[1
]}

Kirner, Simon ^{[1
]}

Opitz, Andreas ^{[1
]}

Rothert, Inga ^{[1
]}

Rhein, Holger ^{[1
]}

Zelt, Matthias ^{[1
]}

Bhatti, Khalid ^{[1
]}

Zollondz, Jens-Hendrik ^{[2
]}

Heidelberg, Andreas ^{[2
]}

Haschke, Jan ^{[3
]}

Amkreutz, Daniel ^{[3
]}

Gall, Stefan ^{[3
]}

Friedrich, Felice ^{[4
]}

Stannowski, Bernd ^{[1
]}

Rech, Bernd ^{[3
]}

Schlatmann, Rutger ^{[1
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie GmbH, PVcomB, D-12489 Berlin, Germany

[2] Masdar PV GmbH, D-99334 Ichtershausen, Germany

[3] Helmholtz Zentrum Berlin Mat & Energie GmbH, Inst Silicon Photovolta, D-12489 Berlin, Germany

[4] PVcomB TU Berlin, Semicond Devices Div, D-10587 Berlin, Germany

来源：

IEEE JOURNAL OF PHOTOVOLTAICS | 2014年 / 4卷 / 06期

关键词：

Heterojunction; liquid-phase crystallization; plasma-enhanced chemical vapor deposition ( PECVD); thin-film silicon; FILM POLYCRYSTALLINE SILICON; THIN; PLASMA; HYDROGEN;

D O I：

10.1109/JPHOTOV.2014.2354257

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Liquid-phase crystallized silicon absorber layers have been applied in heterojunction solar cells on glass substrates with 10.8% conversion efficiency and an open-circuit voltage of 600 mV. Intermediate layers of SiOx, SiNx, and SiOxNy, as well as the a-Si:H precursor layer, were deposited on 30 cm x 30 cm glass substrates using industrial-type plasma-enhanced chemical vapor deposition equipment. After crystallization on 3 cm x 5 cm area using a continuous-wave infrared laser line, the resulting polysilicon material showed high material quality with large grain sizes.

引用

页码：1343 / 1348

页数：6

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