Characterization of porous silicon carbide according to absorption and photoluminescence spectra

被引：6
|
作者：
Berezovska, N. I. [1 ]
Bacherikov, Yu. Yu. [2 ]
Konakova, R. V. [2 ]
Okhrimenko, O. B. [2 ]
Lytvyn, O. S. [2 ]
Linets, L. G. [3 ]
Svetlichnyi, A. M. [3 ]
机构：
[1] Kyiv Taras Shevchenko Natl Univ, Fac Phys, UA-01601 Kiyiv, Ukraine
[2] Natl Acad Sci Ukraine, Lashkarev Inst Semicond Phys, UA-03028 Kiev, Ukraine
[3] Southern Fed Univ, Taganrog Inst Technol, Taganrog 347928, Russia
来源：
SEMICONDUCTORS | 2014年 / 48卷 / 08期
关键词：
LUMINESCENCE; EMISSION; LAYERS;
D O I：
10.1134/S1063782614080041
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The results of the atomic-force microscopy, optical-absorption spectroscopy, and photoluminescence spectroscopy of porous silicon carbide (por-SiC) produced by anodic etching are reported. Analysis of the data shows that the cubic SiC phase is lacking in the porous layer and the photoluminescence signal from por-SiC at the excitation photon energy h nu(ex) a parts per thousand currency sign E (g) appears due to the formation of radiative centers associated with impurity atoms and surface defects produced upon anodic etching of the sample and subsequent treatment to uncover the pores.
引用
收藏
页码：1028 / 1030
页数：3
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