A 40-nm CMOS Wide Input Range and Variable Gain Time-Difference Amplifier Based on Current Source Architecture

被引:0
|
作者
Lin, Li [1 ]
Tolentino, Lean Karlo S. [1 ]
Wang, Chua-Chin [1 ,2 ]
机构
[1] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung 80424, Taiwan
[2] Natl Sun Yat Sen Univ, Inst Undersea Technol, Kaohsiung 80424, Taiwan
关键词
current source; delay; gain; phase detection; time amplier; DESIGN;
D O I
10.1109/ISCAS48785.2022.9937655
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A time-difference amplifier (TDA) with a wide timedifference input range and variable gain is presented in this paper. Its time amplification is performed using novel current source architecture, phase detection, and variable delay circuits. After time amplification, to avoid the current sources for charging and discharging capacitors simultaneously, a reset circuit is added. To widen the input time-difference range, an adjustable current source control is added. The proposed TDA is implemented using TSMC 40-nm CMOS process. The core area is 209.42 x84.775 mu m(2). Though our design is driven by a lower supply voltage, it has the widest time-difference input range and the largest FOM among all existing TDAs.
引用
收藏
页码:2923 / 2927
页数:5
相关论文
共 50 条
  • [1] A Wideband Variable-Gain Amplifier with a Negative Exponential Generation in 40-nm CMOS Technology
    Dong, Yangtao
    Kong, Lingshan
    Boon, Chirn Chye
    Liu, Zhe
    Li, Chenyang
    Yang, Kaituo
    Zhou, Ao
    2020 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2020, : 375 - 378
  • [2] A 13.73 ns Input Time Range TDA Design Based on Adjustable Current Sources Using 40-nm CMOS Process
    Wang, Chua-Chin
    Jose, Oliver Lexter July A.
    Lin, Li
    Tolentino, Lean Karlo S.
    Sangalang, Ralph Gerard B.
    Salvador, Anela L.
    CIRCUITS SYSTEMS AND SIGNAL PROCESSING, 2024, 43 (06) : 3376 - 3395
  • [3] A 56-Gb/s PAM4 Variable Gain Amplifier in 40-nm CMOS Technology
    Li, Zhenghao
    Tang, Minzhe
    Guo, Yuhao
    Huang, Qiwei
    Pan, Quan
    2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019,
  • [4] A PAM-4 80-Gb/s Variable-Gain Transimpedance Amplifier in 40-nm CMOS Technology
    Guo, Yuhao
    Pan, Quan
    PROCEEDINGS OF 2018 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS, TECHNOLOGIES AND APPLICATIONS (ICTA 2018), 2018, : 98 - 99
  • [5] A Variable Gain Amplifier Based on 55 nm CMOS Process
    An W.
    Tong L.
    Liu Y.
    Zhang N.
    Zhang, Na (baiquanbaiquan@126.com), 1600, Hunan University (47): : 103 - 108
  • [6] An E-Band 21-dB Variable-Gain Amplifier with 0.5-V Supply in 40-nm CMOS
    Shin, Gibeom
    Kim, Kyunghwan
    Lee, Kangseop
    Jeong, Hyun-Hak
    Song, Ho-Jin
    ELECTRONICS, 2021, 10 (07)
  • [7] A Radio Frequency Wideband Variable Gain Amplifier Design Based on 40nm CMOS Technology
    Lai, Xiaotong
    Zhang, Youming
    Tang, Xusheng
    Li, Junjie
    Huang, Fengyi
    Jiang, Nan
    2020 THE 5TH IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS AND MICROSYSTEMS (ICICM 2020), 2020, : 117 - 120
  • [8] A 1.1-V 40-nm CMOS High Linearity Voltage Follower with Improved CM Input Range
    Liu, Tianyu
    Bai, Chunfeng
    2020 THE 5TH IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS AND MICROSYSTEMS (ICICM 2020), 2020, : 159 - 162
  • [9] New CMOS Realization of The Differential Difference Operational Floating Amplifier with Wide Input Voltage Range
    Azab, Eman A.
    Mahmoud, Soliman A.
    2008 51ST MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1 AND 2, 2008, : 694 - 697
  • [10] A CMOS variable gain amplifier with wide dynamic range and accurate dB-linear characteristic
    Kim, JH
    Chae, CS
    Woo, YJ
    Cho, GH
    8TH INTERNATIONAL CONFERENCE ON ADVANCED COMMUNICATION TECHNOLOGY, VOLS 1-3: TOWARD THE ERA OF UBIQUITOUS NETWORKS AND SOCIETIES, 2006, : U831 - U835