A Radio Frequency Wideband Variable Gain Amplifier Design Based on 40nm CMOS Technology

被引：0
|
作者：
Lai, Xiaotong [1 ]
Zhang, Youming [1 ,2 ]
Tang, Xusheng [1 ,2 ]
Li, Junjie [1 ]
Huang, Fengyi [1 ]
Jiang, Nan [3 ]
机构：
[1] Southeast Univ, Nanjing 210096, Peoples R China
[2] Purple Mt Labs, Nanjing 211111, Peoples R China
[3] S TEK Reserch Ctr, Shanghai 201203, Peoples R China
来源：
2020 THE 5TH IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS AND MICROSYSTEMS (ICICM 2020) | 2020年
基金：
上海市自然科学基金;
关键词：
variable gain amplifier (VGA); radio frequency (RI); wideband; CMOS;
D O I：
10.1109/icicm50929.2020.9292215
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a wideband variable gain amplifier based on 40nm CMOS technology is presented. The VGA consists of two cascaded cascode amplifiers. The common gate transistors are used as switches to control the current injected into the resonator load in order to control voltage gain. A switched capacitor array is implemented in the resonator to control center frequency. The VGA has a frequency range of 13.5 GHz to 18 GHz and achieves a 1 dB bandwidth of 2 GHz. The gain tuning range is -14 dB to 11 dB and -6 dB to 19 dB at low and high band, respectively, with a gain resolution of 1.5 dB. The input 1 dB compression point is about -16 dBm.
引用
收藏
页码：117 / 120
页数：4
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