Heteroepitaxial growth of AlN at the resonance point of nitrogen-ECR plasma

被引：1

作者：

Inushima, T

Ashino, T

Murano, K

Shiraishi, T

Davydov, VY

Ohoya, S

机构：

[1] Tokai Univ, Dept Commun Engn, Hiratsuka, Kanagawa 2591292, Japan

[2] Russian Acad Sci, Ioffe Physicotech Inst, St Petersburg 194021, Russia

[3] Kanagawa Ind Technol Res Inst, Kanagawa 2430012, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 209卷 / 2-3期

关键词：

AlN; ECR plasma; crystal growth;

D O I：

10.1016/S0022-0248(99)00580-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We present a novel technique to grow AIN on sapphire heteroepitaxially by the use of high-density active nitrogen species, which are generated at the resonance point of nitrogen-ECR plasma? where metal Al is evaporated The AlN film having the c-axis perpendicular to the c-plane of sapphire was obtained at the growth rate of 0.5 mu m/h with the substrate temperature lower than 600 degrees C. The him had the band gap energy of 6.0 eV and good Raman selection rules. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：406 / 409

页数：4

共 50 条

[31] Stress control of AlN thin film sputter-deposited using ECR plasma
Hino R.
Matsumura T.
Esashi M.
Tanaka S.
IEEJ Transactions on Sensors and Micromachines, 2010, 130 (11) : 523 - 527
[32] ECR PLASMA-ETCHING OF GAN, ALN AND INN USING IODINE OR BROMINE CHEMISTRIES
PEARTON, SJ
ABERNATHY, CR
VARTULI, CB
ELECTRONICS LETTERS, 1994, 30 (23) : 1985 - 1986
[33] Characterization of AlON thin films formed by ECR plasma oxidation of AlN/Si(100)
Ohmi, S
Yamanaka, G
Sakai, T
IEICE TRANSACTIONS ON ELECTRONICS, 2004, E87C (01): : 24 - 29
[34] Diagnostics of Downstream Microwave Electron Cyclotron Resonance (ECR) Plasma
Kar, R.
Singh, S. B.
Tiwari, N.
Barve, D. N.
Barve, S. A.
Chand, N.
Patil, D. S.
23RD NATIONAL SYMPOSIUM ON PLASMA SCIENCE AND TECHNOLOGY (PLASMA-2008), 2010, 208
[35] Dependence of the growth rate of an AlN layer on nitrogen pressure in a reactor for sublimation growth of AlN crystals
A. A. Wolfson
E. N. Mokhov
Semiconductors, 2010, 44 : 1383 - 1385
[36] Dependence of the Growth Rate of an AlN Layer on Nitrogen Pressure in a Reactor for Sublimation Growth of AlN Crystals
Wolfson, A. A.
Mokhov, E. N.
SEMICONDUCTORS, 2010, 44 (10) : 1383 - 1385
[37] MBE GROWTH OF GAN WITH ECR PLASMA AND HYDROGEN AZIDE
OBERMAN, DB
LEE, H
GOTZ, WK
HARRIS, JS
COMPOUND SEMICONDUCTORS 1994, 1995, (141): : 131 - 136
[38] HETEROEPITAXIAL GROWTH OF SIC FILMS ON ALN/AL2O3 SUBSTRATES
KUZNETSOV, AN
LEBEDEV, AA
RASTEGAEVA, MG
ROGACHEV, NA
TERUKOV, EI
SHCHEGLOV, MP
SEMICONDUCTORS, 1995, 29 (08) : 740 - 742
[39] Characterization of diffused ECR plasma - Application to pulsed plasma ion implantation of nitrogen in titanium
Sarkissian, AH
Bourque-Viens, A
Paynter, RW
Saint-Jacques, RG
Stansfield, BL
SURFACE & COATINGS TECHNOLOGY, 1998, 98 (1-3): : 1336 - 1340
[40] Investigation of ECR plasma uniformity from the point of view of production and confinement
Itagaki, N
Yoshizawa, T
Ueda, Y
Kawai, Y
THIN SOLID FILMS, 2001, 386 (02) : 152 - 159

← 1 2 3 4 5 →