Heteroepitaxial growth of AlN at the resonance point of nitrogen-ECR plasma

被引：1

作者：

Inushima, T

Ashino, T

Murano, K

Shiraishi, T

Davydov, VY

Ohoya, S

机构：

[1] Tokai Univ, Dept Commun Engn, Hiratsuka, Kanagawa 2591292, Japan

[2] Russian Acad Sci, Ioffe Physicotech Inst, St Petersburg 194021, Russia

[3] Kanagawa Ind Technol Res Inst, Kanagawa 2430012, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 209卷 / 2-3期

关键词：

AlN; ECR plasma; crystal growth;

D O I：

10.1016/S0022-0248(99)00580-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We present a novel technique to grow AIN on sapphire heteroepitaxially by the use of high-density active nitrogen species, which are generated at the resonance point of nitrogen-ECR plasma? where metal Al is evaporated The AlN film having the c-axis perpendicular to the c-plane of sapphire was obtained at the growth rate of 0.5 mu m/h with the substrate temperature lower than 600 degrees C. The him had the band gap energy of 6.0 eV and good Raman selection rules. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：406 / 409

页数：4

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