Electronic states in Si nanocrystal thin films

被引：10

作者：

Zhang, Rong ^{[1
]}

Wu, Hua ^{[2
]}

Chen, Xinyi ^{[3
]}

Shen, Wenzhong ^{[3
]}

机构：

[1] Shanghai Maritime Univ, Dept Phys, Shanghai 200135, Peoples R China

[2] Donghua Univ, Dept Appl Phys, Shanghai 201620, Peoples R China

[3] Shanghai Jiao Tong Univ, Dept Phys, Lab Condensed Matter Spect & Optoelect Phys, Shanghai 200030, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 24期

关键词：

electronic structure; elemental semiconductors; energy gap; hydrogen; nanostructured materials; photoconductivity; Raman spectra; semiconductor thin films; silicon; HYDROGENATED AMORPHOUS-SILICON; RAMAN-SPECTRA;

D O I：

10.1063/1.3154520

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the investigation of electronic states in hydrogenated nanocrystalline silicon (nc-Si:H) thin films through the electronic transitions by photocurrent measurements. Higher photocurrent response has been observed above the bulk Si band gap of 1.05 eV in the nc-Si:H films with larger crystalline faction. We attribute the high photocurrent response to the enhancement of the photocarrier transport due to the formation of the extended electronic states and the direct electronic transition caused by the discrete states. The interaction of the extended states and discrete states has been further demonstrated by the Fano resonance observed in the Raman scattering spectra.

引用

页数：3

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