Study of electrical frequency response through the metal-insulator transition in highly conducting polymers

被引:2
|
作者
Zhou, Li-Ping
Li, Zhen-Ya [1 ]
机构
[1] Suzhou Univ, Dept Phys, Suzhou 215006, Peoples R China
[2] CCAST, World Lab, Beijing 100080, Peoples R China
关键词
D O I
10.1063/1.2219004
中图分类号
O59 [应用物理学];
学科分类号
摘要
Based on a random resistor network (RRN), we study the electrical frequency response, including the unusual frequency dependent conductivity and multiple zero crossing of the dielectric function of highly conducting polymers. The electronic transport properties can be studied by modeling the system as a chain-linked granular network, with metallic regions randomly distributed in an amorphous host. Taking into account the contributions of coherent and incoherent transport channels, and the percolation effect of conducting polymers in our RRN model, we can well explain the negative value of epsilon and the low-energy structure of conducting polymers. The calculated epsilon(omega) and sigma(omega) reproduce the main features of recent broadband optical experiments. (c) 2006 American Institute of Physics.
引用
收藏
页数:7
相关论文
共 50 条
  • [41] Effect of disorder on the electrical properties of amorphous conducting carbon films: Observance of field induced metal-insulator transition?
    Meenakshi, V
    Subramanyam, SV
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2000, 14 (2-3): : 224 - 229
  • [42] Universal dielectric response across a continuous metal-insulator transition
    Haldar, Prosenjit
    Laad, M. S.
    Hassan, S. R.
    PHYSICAL REVIEW B, 2019, 99 (12)
  • [43] Optical response of FeS due to metal-insulator transition at pressure
    Chen, L.
    Matsunami, M.
    Nanba, T.
    Kobayashi, H.
    PHYSICA B-CONDENSED MATTER, 2006, 378-80 : 1116 - 1117
  • [44] Electrical Conductivity and Magnetoresistance of Silicon Microstructures in the Vicinity to Metal-Insulator Transition
    Khoverko, Yu. M.
    Shcherban, N. O.
    PHYSICS AND CHEMISTRY OF SOLID STATE, 2018, 19 (03): : 246 - 253
  • [45] Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions
    Ruzmetov, Dmitry
    Gopalakrishnan, Gokul
    Deng, Jiangdong
    Narayanamurti, Venkatesh
    Ramanathan, Shriram
    Journal of Applied Physics, 2009, 106 (08):
  • [46] CHARACTERIZATION OF ELECTRICAL TRANSPORT IN LSMO WITH ENHANCED TEMPERATURE OF METAL-INSULATOR TRANSITION
    Strbik, Vladimir
    Chromik, Stefan
    JOURNAL OF ELECTRICAL ENGINEERING-ELEKTROTECHNICKY CASOPIS, 2012, 63 (04): : 270 - 272
  • [47] Electrical oscillations induced by the metal-insulator transition in VO2
    Kim, Hyun-Tak
    Kim, Bong-Jun
    Choi, Sungyoul
    Chae, Byung-Gyu
    Lee, Yong Wook
    Driscoll, T.
    Qazilbash, M. M.
    Basov, D. N.
    JOURNAL OF APPLIED PHYSICS, 2010, 107 (02)
  • [48] Electrical triggering of metal-insulator transition in nanoscale vanadium oxide junctions
    Ruzmetov, Dmitry
    Gopalakrishnan, Gokul
    Deng, Jiangdong
    Narayanamurti, Venkatesh
    Ramanathan, Shriram
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (08)
  • [49] Surface-state electrical conductivity at a metal-insulator transition on silicon
    Tanikawa, T
    Matsuda, I
    Kanagawa, T
    Hasegawa, S
    PHYSICAL REVIEW LETTERS, 2004, 93 (01) : 016801 - 1
  • [50] Electrical conduction and metal-insulator transition of indium nanowires on Si(111)
    Hatta, Shinichiro
    Noma, Takashi
    Okuyama, Hiroshi
    Aruga, Tetsuya
    PHYSICAL REVIEW B, 2017, 95 (19)