Electrical characterization of p-Si/SiGe/Si(100) surface covered by 9,10 Phenanthrenequinone over layer

被引：2

作者：

Arashti, Maryam Gholizadeh ^{[1
]}

Sadeghzadeh, Mohammad Ali ^{[1
]}

机构：

[1] Yazd Univ, Dept Phys, Yazd, Iran

来源：

VACUUM | 2014年 / 101卷

关键词：

Si/SiGe/Si quantum well; Si surface; Surface charges; Surface passivation; Surface states; Surface Fermi level; INTERFACE STATE DENSITY; ENERGY-DISTRIBUTION; ALKYL MONOLAYERS; SI(100) SURFACE; SILICON; PASSIVATION; TEMPERATURE; CHEMISTRY; SI(111);

D O I：

10.1016/j.vacuum.2013.09.008

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electrical characterization of the p-Si/SiGe/Si(100) surface covered by organic molecule 9,10 Phenanthrenequinone (PQ), have been evaluated via analysis of hole gas transferred in the SiGe quantum well at low temperature. The enhancement in the density of two dimensional hole gas (2DHG) formed in the SiGe quantum well in the structure covered by PQ thin film is attributed to electrical passivation of Si surface states. Finally, the density of Si surface states (state/eV cm(2)), and surface Fermi level position, have been evaluated via Modified Mid-gap Pinning Model (MMPM) applied to experimental results. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：267 / 270

页数：4

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