Fabrication and Characterization of Dense PZT Thick Films Using Continuous Wave CO2 Laser Annealing

Ferroelectric Pb(Zr0.52Ti0.48)O-3(PZT) thick films of different thickness were successfully prepared on Pt/Ti/SiO2/Si and LSMO/SUS430 substrates using powder-mixing and sol-gel spin coating process. Films on two different types of substrates were fabricated and annealed using low temperature continuous-wave CO2 laser. X-ray diffraction analysis indicated that the PZT films mainly had a perovskite-type structure with (110) preferred orientation. PZT thick films of type-I substrate show cracks, whereas uniform and dense microstructure is obtained with the films of type-II. Type-II thick films had shown lower leakage current density (similar to 10(-9)A/cm(2)) than the type-I thick films (similar to 10(-6)A/cm(2)). Moreover, the dielectric constant is found to be higher in type-II thick films. PZT thick films of type-II, grown on LSMO/SUS430 substrate show a further decrease in leakage current, indicating that the LSMO layer resist the inter-diffusion of elements from the metallic substrate to the PZT materials.