Tungsten-Doped Indium Oxide Thin Film as an Effective High-Temperature Copper Diffusion Barrier

被引：9
|
作者：
Yu, Jian [1 ]
Bian, Jiantao [1 ]
Jiang, Linqin [2 ]
Qiu, Yu [1 ,2 ]
Duan, Weiyuan [1 ]
Meng, Fanying [1 ]
Liu, Zhengxin [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 201807, Peoples R China
[2] Fujian Jiangxia Univ, Coll Elect & Informat Sci, Fuzhou 350108, Peoples R China
来源：
ECS SOLID STATE LETTERS | 2014年 / 3卷 / 06期
基金：
国家高技术研究发展计划(863计划);
关键词：
SILICON SOLAR-CELLS; SUBSTRATE; CU; PERFORMANCE; CONTACT; NISI; SI;
D O I：
10.1149/2.003406ssl
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The barrier property of reactive plasma deposited tungsten-doped indium oxide (IWO) thin film was investigated for copper diffusion at high temperature. The Cu 100 nm/IWO 80 nm/Si stacks were annealed between 500 degrees C and 850 degrees C. X-ray diffraction, scanning electron microscopy and current-voltage measurements reveal that the polycrystalline IWO film exhibits high thermal stability and effectively prevents copper diffusion up to 800 degrees C. At 850 degrees C, Cu3Si phase was formed due to the inter-diffusion of Si and Cu through the IWO barrier. The results show that IWO is the excellent high-temperature barrier material for copper-based photovoltaics. (C) 2014 The Electrochemical Society. All rights reserved.
引用
收藏
页码：N15 / N17
页数：3
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