A new class of materials with promising thermoelectric properties: MNiSn (M = Ti, Zr, Hf)

被引:65
|
作者
Hohl, H
Ramirez, AP
Kaefer, W
Fess, K
Thurner, C
Kloc, C
Bucher, E
机构
关键词
D O I
10.1557/PROC-478-109
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
TiNiSn, ZrNiSn and HfNiSn are members of a large group of intermetallic compounds which crystallize in the cubic MgAgAs-type structure. Polycrystalline samples of these compounds hare been prepared and investigated for their thermoelectric properties. With thermopowers of about -200 mu V/K and resistivities of a few m Omega cm, power factors S-2/rho as high as 38 mu W/K(2)cm were obtained at 700 K. These remarkably high power factors are, however. accompanied by a thermal conductivity which is too high for applications. In order to reduce the parasitic lattice thermal conductivity, solid solutions Zr1-xHfxNiSn, Zr1-xTixNiSn, and Hf1-xTixNiSn were formed. The figure of merit of Zr0.5Hf0.5NiSn at 700 K (ZT = 0.41) exceeds the end members ZrNiSn (ZT = 0.26) and HfNiSn (ZT = 0.22).
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页码:109 / 114
页数:6
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