Effect of Polymer Protection and Film Thickness on Acid Generator Distribution in Chemically Amplified Resists

被引:10
|
作者
Fukuyama, Takehiro [1 ]
Kozawa, Takahiro [1 ]
Yamamoto, Hiroki [1 ]
Tagawa, Seiichi [1 ]
Irie, Makiko [2 ]
Mimura, Takeyoshi [2 ]
Iwai, Takeshi [2 ]
Onodera, Junichi [2 ]
Hirosawa, Ichiro [3 ]
Koganesawa, Tomoyuki [3 ]
Horie, Kazuyuki [3 ]
机构
[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan
[2] Tokyo Ohka Kogyo Co Ltd, Kanagawa 2530114, Japan
[3] Japan Synchrotron Radiat Res Inst JASRI, Sayo, Hyogo 6795198, Japan
关键词
acid generator; segregation; chemically amplified resist; EUV lithography; X-ray reflectivity; LINE-EDGE ROUGHNESS; EXTREME-ULTRAVIOLET RESIST; MOLECULAR-WEIGHT; LITHOGRAPHY; EFFICIENCY; AMPLIFICATION; PATTERNS; IMAGE;
D O I
10.2494/photopolymer.22.105
中图分类号
O63 [高分子化学(高聚物)];
学科分类号
070305 ; 080501 ; 081704 ;
摘要
Films of chemically amplified resists with different polymer polarity and film thickness were prepared to investigate their effect on acid generator distribution within the film. Poly(4-hydroxystyrene) (PHS) was used as a polymer, and its polarity was changed by partially protecting its hydroxyl groups. Diphenyliodonium-triflate (DPI-tf) and triphenylsulfonium-antimonate (TPS-Sb) were chosen as an acid generator to enhance the density contrast within the film. Films with acid generator concentration of 10 and 30 wt% were prepared for the non-protected PHS resist film and also films with different thicknesses were prepared for 10 wt% concentration samples. For the partially protected PHS resist films, two films with different thicknesses were prepared for 30 wt% TPS-Sb and 10 wt% DPI-tf films. X-ray reflectivity measurements were performed against the films to investigate the depth density profile. The acid generator distribution was found to be inhomogeneous in most of the films, and the distribution showed film thickness and polarity dependences.
引用
收藏
页码:105 / 109
页数:5
相关论文
共 50 条
  • [31] Spectroscopic characterization of acid mobility in chemically amplified resists
    Jessop, JLP
    Goldie, SN
    Scranton, AB
    Blanchard, GJ
    Rangarajan, B
    Okoroanyanwu, U
    Subramanian, R
    Templeton, MK
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVII, PTS 1 AND 2, 2000, 3999 : 161 - 170
  • [32] A study of acid evaporation property in chemically amplified resists
    Hashimoto, S
    Itani, T
    Yoshino, H
    Yamana, M
    Samoto, N
    Kasama, K
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIV, 1997, 3049 : 248 - 255
  • [33] LITHOGRAPHIC EFFECTS OF ACID DIFFUSION IN CHEMICALLY AMPLIFIED RESISTS
    MACK, CA
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1995, 209 : 92 - PMSE
  • [34] Potential cause of inhomogeneous acid distribution in chemically amplified resists for post optical lithography
    Yamamoto, Hiroki
    Kozawa, Takahiro
    Nakano, Atsuro
    Okamoto, Kazumasa
    Tagawa, Seiichi
    Ando, Tomoyuki
    Sato, Mitsuru
    Komano, Hiroji
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2005, 44 (7 B): : 5836 - 5838
  • [35] Potential cause of inhomogeneous acid distribution in chemically amplified resists for post optical lithography
    Yamamoto, H
    Kozawa, T
    Nakano, A
    Okamoto, K
    Tagawa, S
    Ando, T
    Sato, M
    Komano, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (7B): : 5836 - 5838
  • [36] Effect of Molecular Structure on Depth Profile of Acid Generator Distribution in Chemically Amplified Resist Films
    Fukuyama, Takehiro
    Kozawa, Takahiro
    Okamoto, Kazumasa
    Tagawa, Seiichi
    Irie, Makiko
    Mimura, Takeyoshi
    Iwai, Takeshi
    Onodera, Junichi
    Hirosawa, Ichiro
    Koganesawa, Tomoyuki
    Horie, Kazuyuki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (06) : 06FC031 - 06FC034
  • [37] Effects of acid generator anions on radiation-induced decomposition and dissolution kinetics of chemically amplified resists
    Tsuda, Yoshika
    Muroya, Yusa
    Kozawa, Takahiro
    Ikeda, Takuya
    Komuro, Yoshitaka
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2024, 63 (08)
  • [38] The effect of humidity on deprotection kinetics in chemically amplified resists
    Burns, SD
    Medeiros, DR
    Johnson, HF
    Wallraff, GM
    Hinsberg, WD
    Willson, CG
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIX, PTS 1 AND 2, 2002, 4690 : 321 - 331
  • [39] Relationship between deprotection and film thickness loss during plasma etching of positive tone chemically amplified resists
    Mahorowala, AP
    Medeiros, DR
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2001, 19 (04): : 1374 - 1378
  • [40] Theoretical study on relationship between acid generation efficiency and acid generator concentration in chemically amplified extreme ultraviolet resists
    Kozawa, Takahiro
    Tagawa, Seiichi
    Shell, Melissa
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (45-49): : L1143 - L1145