InGaAs-Capped InAs-GaAs Quantum-Dot Infrared Photodetectors Operating in the Long-Wavelength Infrared Range

被引：14
|
作者：
Lin, Wei-Hsun [1 ]
Tseng, Chi-Che [2 ]
Chao, Kuang-Ping [1 ]
Mai, Shu-Cheng [1 ]
Lin, Shih-Yen [3 ,4 ,5 ]
Wu, Meng-Chyi [1 ]
机构：
[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan
[2] Natl Tsing Hua Univ, Inst Photo Technol, Hsinchu 300, Taiwan
[3] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan
[4] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan
[5] Natl Taiwan Ocean Univ, Inst Optoelect Sci, Chilung 20224, Taiwan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2009年 / 21卷 / 18期
关键词：
Quantum-dot infrared photodetectors (QDIPs); HIGH-TEMPERATURE OPERATION;
D O I：
10.1109/LPT.2009.2026630
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A ten-period InAs-GaAs quantum-dot infrared photodetector (QDIP) with 8-nm In0.15Ga0.85 As capping layer grown after quantum-dot (QD) deposition is investigated. With reduced InAs QD coverage down to 2.0 mono-layers, responses at 10.4 and 8.4 mu m are observed for the device under positive and negative biases, respectively. The phenomenon is attributed to the large Stark effect resulted from the asymmetric band diagrams of the device under different voltage polarities. The demonstration of long-wavelength infrared detections with the simple structures of the InGaAs-capped QDIP is advantageous for the development of multicolor QDIP focal-plane arrays.
引用
收藏
页码：1332 / 1334
页数：3
相关论文
共 50 条
  • [21] InAs/InGaAs/InP structures for quantum dot infrared photodetectors
    Landi, SM
    Pires, MP
    Tribuzy, CVB
    Souza, PL
    Marega, E
    Silva, AG
    Guimaraes, PSS
    Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 8, 2005, 2 (08): : 3171 - 3174
  • [22] Long-wavelength quantum well infrared photodetectors
    Razeghi, M
    Erdtmann, M
    Jelen, C
    Diaz, J
    Guastavino, F
    Park, YS
    DEFENCE SCIENCE JOURNAL, 2001, 51 (01) : 35 - 52
  • [23] Noise and photoconductive gain in InAs quantum-dot infrared photodetectors
    Ye, ZM
    Campbell, JC
    Chen, ZH
    Kim, ET
    Madhukar, A
    APPLIED PHYSICS LETTERS, 2003, 83 (06) : 1234 - 1236
  • [24] Quantum-dot infrared photodetectors
    Campbell, Joe C.
    Madhukar, Anupam
    PROCEEDINGS OF THE IEEE, 2007, 95 (09) : 1815 - 1827
  • [25] Selective Intermixing of InGaAs/GaAs Quantum Dot Infrared Photodetectors
    McKerracher, Ian
    Wong-Leung, Jenny
    Jolley, Greg
    Fu, Lan
    Tan, Hoe H.
    Jagadish, Chennupati
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2011, 47 (05) : 577 - 590
  • [26] Intraband absorption for InAs/GaAs quantum dot infrared photodetectors
    Zhang, JZ
    Galbraith, I
    APPLIED PHYSICS LETTERS, 2004, 84 (11) : 1934 - 1936
  • [27] Long wave infrared InAs-InGaAs quantum-dot infrared photodetector with high operating temperature over 170K
    Lu, Xuejun
    Vaillancourt, Jarrod
    Meisner, Mark J.
    Stintz, Andreas
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (19) : 5878 - 5882
  • [28] Characteristics of high-operating-temperature InAs/GaAs quantum-dot infrared detectors
    Pal, D
    Towe, E
    APPLIED PHYSICS LETTERS, 2006, 88 (15)
  • [29] Long-wavelength electroluminescence of InGaAs-capped type-II GaSb/GaAs quantum-rings at room temperature
    Lin, Wei-Hsun
    Wang, Kai-Wei
    Lin, Shih-Yen
    Wu, Meng-Chyi
    JOURNAL OF CRYSTAL GROWTH, 2013, 378 : 571 - 575
  • [30] Comparison of Three Design Architectures for Quantum Dot Infrared Photodetectors: InGaAs-Capped Dots, Dots-in-a-Well, and Submonolayer Quantum Dots
    Ghadi, Hemant
    Sengupta, Saumya
    Shetty, Saikalash
    Manohar, Ashutosh
    Balgarkashi, Akshay
    Chakrabarti, Subhananda
    Pendyala, Naresh Babu
    Prajapati, Sachin L.
    Kumar, Ashwani
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2015, 14 (04) : 603 - 607
12345