Gamma-ray irradiation-induced mobility enhancement of 4H-SiC NMOSFETs with a Ba-silicate interface layer

被引：3

作者：

Muraoka, Kosuke ^{[1
]}

Sezaki, Hiroshi ^{[1
,2
]}

Ishikawa, Seiji ^{[1
,2
]}

Maeda, Tomonori ^{[1
,2
]}

Makino, Takahiro ^{[3
]}

Takeyama, Akinori ^{[3
]}

Ohshima, Takeshi ^{[3
]}

Kuroki, Shin-Ichiro ^{[1
]}

机构：

[1] Hiroshima Univ, Res Inst Nanodevice & Bio Syst, 1-4-2 Kagamiyama, Hiroshima 7398527, Japan

[2] Phenitec Semicond Corp, 150 Kinoko Cho, Okayama 7158602, Japan

[3] Natl Inst Quantum & Radiol Sci & Technol QST, 1233 Watanuki, Takasaki, Gunma 3701292, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2019年 / 58卷 / 08期

关键词：

CHANNEL MOBILITY; RADIATION HARDNESS; TRAPS; MOSFETS; DEPENDENCE; OXIDES; SIO2;

D O I：

10.7567/1347-4065/ab2dab

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

4H-SiC n-channel metal oxide semiconductor field effect transistors (NMOSFETs) with a Ba-silicate interface layer were irradiated with gamma- rays up to 850 kGy at room temperature. Above 600 kGy, the field effect mobility increased from 12 to 18 cm(2) V-1 s(-1). The narrower channel in the NMOSFETs enhanced radiation responses, such as mobility enhancement and threshold voltage shift. These results indicate that the edge of the channel significantly modifies the electrical characteristics. (C) 2019 The Japan Society of Applied Physics

引用

页数：7

共 32 条

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