Graphene Field-Effect Transistor and Its Application for Electronic Sensing

被引：246
|
作者：
Zhan, Beibei [1 ]
Li, Chen [1 ]
Yang, Jun [2 ,3 ]
Jenkins, Gareth [1 ]
Huang, Wei [1 ,2 ,3 ]
Dong, Xiaochen [1 ,2 ,3 ]
机构：
[1] Nanjing Univ Posts & Telecommun, KLOEID, Nanjing 210046, Jiangsu, Peoples R China
[2] Nanjing Tech Univ, Jiangsu Singapore Joint Res Ctr Organ Bioelect &, Nanjing 211816, Jiangsu, Peoples R China
[3] Nanjing Tech Univ, Inst Adv Mat, Nanjing 211816, Jiangsu, Peoples R China
来源：
SMALL | 2014年 / 10卷 / 20期
关键词：
graphene; field-effect transistors; sensing; SINGLE-LAYER GRAPHENE; LABEL-FREE DETECTION; CARBON-NANOTUBE; 3-DIMENSIONAL GRAPHENE; LARGE-AREA; GOLD-NANOPARTICLE; ELECTRICAL-PROPERTIES; EPITAXIAL GRAPHENE; DNA HYBRIDIZATION; HIGH-FREQUENCY;
D O I：
10.1002/smll.201400463
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Graphene, because of its excellent mechanical, electrical, chemical, physical properties, sparked great interest to develop and extend its applications. Particularly, graphene based field-effect transistors (GFETs) present exciting and bright prospects for sensing applications due to their greatly higher sensitivity and stronger selectivity. This Review highlights a selection of important topics pertinent to GFETs and their application in electronic sensors. This article begins with a description of the fabrications and characterizations of GFETs, and then introduces the new developments in physical, chemical, and biological electronic detection using GFETs. Finally, several perspective and current challenges of GFETs development are presented, and some proposals are suggested for further development and exploration.
引用
收藏
页码：4042 / 4065
页数：24
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