On-Wafer Multi-Port Circuits Characterization Technique with a two-port VNA

被引:0
|
作者
Quintanel, Sebastien [1 ]
Pasquet, Daniel [2 ]
Bourdel, Emmanuelle [1 ]
Duperrier, Cedric [1 ]
Lesenechal, Dominique [2 ]
Thanh-Vinh Dinh [2 ]
Descamps, Philippe [2 ]
机构
[1] ENSEA ETIS, F-95014 Cergy, France
[2] LaMIPS, F-14050 Caen, France
关键词
Multi-port circuits; S-parameters; millimeter waves; branch-line coupler;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes a simple technique for on wafer passive multi-port circuits characterization. This method gives an efficient measurement of the scattering S-parameters of these devices at their ports reference planes. Furthermore, it provides cost saving in terms of used wafer surface and equipments by using an universal two-port Vector Network Analyzer (VNA). This method is applied to the characterization of a branch-line coupler designed on a lossy silicon substrate at millimeter waves (30 GHz). The de-embedding and the experimental procedures are presented in this paper. The experimental measurements extracted from our method show a good agreement with those made with a four-port VNA.
引用
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页数:4
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