An upper limit of concentration for erbium photoluminescence from silica-based thin films formed by MEVVA implantation

被引：2
|
作者：
Xiao, ZS [1 ]
Xu, F
Cheng, GA
Zhang, TH
机构：
[1] Beijing Normal Univ, Inst Low Energy Nucl Phys, Beijing 100875, Peoples R China
[2] Fudan Univ, Surface Phys Lab, Shanghai 200433, Peoples R China
[3] Beijing Normal Univ, Key Lab Univ Radiat Beam Technol & Mat Modificat, Beijing 100875, Peoples R China
来源：
PHYSICS LETTERS A | 2004年 / 327卷 / 04期
关键词：
ion implantation; photoluminescence; erbium; silica;
D O I：
10.1016/j.physleta.2004.05.002
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
SiO2 thin films containing nanocrystalline Si (nc-Si) and Er ions have been fabricated by using a metal vapor vacuum arc (MEVVA) ion source. Photoluminescence (PL) properties of the films were studied as the function of the Er ion dose. The PL intensity was found to be strongly enhanced by incorporating nc-Si in the films. The intensity of the 1.54 mum luminescence peaks firstly increases with the increasing of the Er concentration, arriving at a maximum with Er concentration of 8.0 at.% at room temperature (RT). Then PL yields decreased with further increase in Er ion dose. A mechanism about energy transferring between the photogenerated carrier in the nc-Si and Er3+ in SiO2 has been investigated. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：332 / 336
页数：5
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