An upper limit of concentration for erbium photoluminescence from silica-based thin films formed by MEVVA implantation

被引：2
|
作者：
Xiao, ZS [1 ]
Xu, F
Cheng, GA
Zhang, TH
机构：
[1] Beijing Normal Univ, Inst Low Energy Nucl Phys, Beijing 100875, Peoples R China
[2] Fudan Univ, Surface Phys Lab, Shanghai 200433, Peoples R China
[3] Beijing Normal Univ, Key Lab Univ Radiat Beam Technol & Mat Modificat, Beijing 100875, Peoples R China
来源：
PHYSICS LETTERS A | 2004年 / 327卷 / 04期
关键词：
ion implantation; photoluminescence; erbium; silica;
D O I：
10.1016/j.physleta.2004.05.002
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
SiO2 thin films containing nanocrystalline Si (nc-Si) and Er ions have been fabricated by using a metal vapor vacuum arc (MEVVA) ion source. Photoluminescence (PL) properties of the films were studied as the function of the Er ion dose. The PL intensity was found to be strongly enhanced by incorporating nc-Si in the films. The intensity of the 1.54 mum luminescence peaks firstly increases with the increasing of the Er concentration, arriving at a maximum with Er concentration of 8.0 at.% at room temperature (RT). Then PL yields decreased with further increase in Er ion dose. A mechanism about energy transferring between the photogenerated carrier in the nc-Si and Er3+ in SiO2 has been investigated. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：332 / 336
页数：5
相关论文
共 50 条
  • [1] Optimum silicon ion dose for 1540 nm photoluminescence from erbium-doped silica thin films formed by MEVVA implantation
    Xiao, ZS
    Xu, F
    Cheng, GA
    Zhang, TH
    Wong, SP
    PHYSICS LETTERS A, 2002, 304 (5-6) : 172 - 176
  • [2] Effects of Si and Er concentration on 1.54 μm photoluminescence from silica-based thin films
    Xiao, ZS
    Xu, F
    Cheng, GA
    Zhang, TH
    Wong, SP
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2002, 16 (28-29): : 4242 - 4245
  • [3] Photoluminescence from neodymium silicide thin films formed by MEVVA ion source
    XIAO Zhi-Song
    XU Fei
    CHENG Guo-An
    ZHANG Tong-He
    YI Zhong-Zhen WANG Shui-Feng (Key Laboratory in University for Radiation Beam Technology and Materials Modification
    Beijing Radiation
    NuclearScienceandTechniques, 2001, (01) : 21 - 25
  • [4] Photoluminescence from neodymium silicide thin films formed by MEVVA ion source
    Xiao, Z.S.
    Xu, F.
    Cheng, G.A.
    Zhang, T.H.
    Yi, Z.Z.
    Wang, S.F.
    Nuclear Science and Techniques/Hewuli, 2001, 12 (01):
  • [5] Energy transfer in Er doped silica films containing Si nanocrystals formed by MEVVA ion implantation
    Xiao, ZS
    Xu, F
    Zhang, TH
    Cheng, G
    Gu, LL
    Wong, SP
    SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 1456 - 1459
  • [6] Room temperature photoluminescence from erbium-doped silica thin films prepared by cosputtering
    Gu, G
    Du, YW
    Yu, T
    THIN SOLID FILMS, 1998, 315 (1-2) : 263 - 265
  • [7] Spontaneous Crack Healing in Nanostructured Silica-Based Thin Films
    Itoh, Shun
    Kodama, Satoshi
    Kobayashi, Maho
    Hara, Shintaro
    Wada, Hiroaki
    Kuroda, Kazuyuki
    Shimojima, Atsushi
    ACS NANO, 2017, 11 (10) : 10289 - 10294
  • [8] Research progress in silica-based superhydrophobic thin films on glass
    Bao, Tian
    Wang, Dong
    Surface Technology, 2019, 48 (08): : 156 - 164
  • [9] Mesoporous sol-gel silica-based nanocomposite thin films
    Musat, Viorica
    Fortunato, Elvira
    Dima, Stefan
    Iticescu, Catalina
    REVUE ROUMAINE DE CHIMIE, 2007, 52 (07) : 671 - 676
  • [10] Heat treatment of ion-irradiated silica-based thin films
    Shojaee, S. A.
    Qi, Y.
    Wang, Y. Q.
    Prenzel, T.
    Mehner, A.
    Lucca, D. A.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 447 : 55 - 58
12345