Au/Pt/InGaN/GaN Heterostructure Schottky Prototype Solar Cell

被引：1
|
作者：
Xue Jun-Jun [1 ]
Chen Dun-Jun [1 ]
Liu Bin [1 ]
Xie Zie-Li [1 ]
Jiang Ruo-Lian [1 ]
Zhang Rong [1 ]
Zheng You-Dou [1 ]
机构：
[1] Nanjing Univ, Dept Phys, Nanjing Natl Lab Microstruct, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2009年 / 26卷 / 09期
基金：
中国国家自然科学基金;
关键词：
BAND-GAP; ENERGY-GAP; INN; DEPENDENCE; ALLOYS; LAYER;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A patterned Au/Pt/In0.2Ga0.8N/GaN heterostructure Schottky prototype solar cell is fabricated. The forward current-voltage characteristics indicate that thermionic emission is a dominant current transport mechanism at the Pt/InGaN interface in our fabricated cell. The Schottky solar cell has an open-circuit voltage of 0.91 V, short-circuit current density of 7 mA/cm(2), and fill factor of 0.45 when illuminated by a Xe lamp with a power density of 300 mW/cm(2). It exhibits a higher short-circuit current density of 30 mA/cm(2) and an external quantum efficiency of over 25% when illuminated by a 20-mW-power He-Cd laser.
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页数：4
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