Scaling characteristics of depletion type, fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors and inverters following Ar plasma treatment

被引：6
|
作者：
Kim, Joonwoo [1 ]
Jeong, Soon Moon [1 ]
Jeong, Jaewook [2 ]
机构：
[1] Daegu Gyeongbuk Inst Sci & Technol, Nano & Bio Res Div, Daegu 711873, South Korea
[2] Chungbuk Natl Univ, Sch Informat & Commun Engn, Cheongju 28644, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 11期
基金：
新加坡国家研究基金会;
关键词：
D O I：
10.7567/JJAP.54.114102
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We fabricated depletion type, transparent amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) and inverters with an Ar plasma treatment and analyzed their scaling characteristics with channel lengths ranging from 2 to 100 mu m. The improvement of the field-effect mobility of a-IGZO TFTs is apparent only for short channel lengths. There is also an unexpected side effect of the Ar plasma treatment, which introduces back-channel interfacial states and induces a positive shift in the threshold voltage of a-IGZO TFTs. The resulting increase in the field-effect mobility and the positive shift in the threshold voltage of each TFT increase the differential gain up to 3 times and the positive shift in the transient point of the transparent inverters. (C) 2015 The Japan Society of Applied Physics
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页数：5
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