Comparison between trap and self-heating induced mobility degradation in AlGaN/GaN HEMTs

被引：9
|
作者：
Kalavagunta, Aditya [1 ]
Mukherjee, Shubhajit [2 ]
Reed, Robert [2 ]
Schrimpf, R. D. [2 ]
机构：
[1] Comsol Inc, Los Angeles, CA 90024 USA
[2] Vanderbilt Univ, Nashville, TN 37235 USA
来源：
MICROELECTRONICS RELIABILITY | 2014年 / 54卷 / 03期
关键词：
ELECTRON; TRANSISTORS; SIMULATION; FIELD;
D O I：
10.1016/j.microrel.2013.10.018
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Mobility degradation due to scattering from radiation-induced defects is compared to that produced by self-heating in proton-irradiated AlGaN/GaN HEMTs using experiments and simulations. After irradiation, the mobility in the 2DEG is limited by scattering from charged traps and is temperature-limited near the gate-drain access region. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码：570 / 574
页数：5
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