Laser damage in silicon: Energy absorption, relaxation, and transport

被引：126
|
作者：
Raemer, A. [1 ,2 ]
Osmani, O. [3 ,4 ]
Rethfeld, B. [1 ,2 ]
机构：
[1] Univ Kaiserslautern, Dept Phys, D-67663 Kaiserslautern, Germany
[2] Univ Kaiserslautern, Res Ctr OPTIMAS, D-67663 Kaiserslautern, Germany
[3] Univ Duisburg Essen, Fac Phys, D-47048 Duisburg, Germany
[4] CeNIDE, D-47048 Duisburg, Germany
来源：
JOURNAL OF APPLIED PHYSICS | 2014年 / 116卷 / 05期
关键词：
GAMMA-RAY INTERACTION; NONEQUILIBRIUM ELECTRON; DIELECTRIC-BREAKDOWN; ULTRAFAST ELECTRON; LATTICE-DYNAMICS; PULSE ABLATION; EFFECTIVE-MASS; FEMTOSECOND; SEMICONDUCTORS; METALS;
D O I：
10.1063/1.4891633
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Silicon irradiated with an ultrashort 800 nm-laser pulse is studied theoretically using a two temperature description that considers the transient free carrier density during and after irradiation. A Drude model is implemented to account for the highly transient optical parameters. We analyze the importance of considering these density-dependent parameters as well as the choice of the Drude collision frequency. In addition, degeneracy and transport effects are investigated. The importance of each of these processes for resulting calculated damage thresholds is studied. We report damage thresholds calculations that are in very good agreement with experimental results over a wide range of pulse durations. (C) 2014 AIP Publishing LLC.
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页数：12
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