The low thermal gradient CZ technique as a way of growing of dislocation-free germanium crystals

被引：11

作者：

Moskovskih, V. A. ^{[1
]}

Kasimkin, P. V. ^{[1
]}

Shlegel, V. N. ^{[2
]}

Vasiliev, Y. V. ^{[2
]}

Gridchin, V. A. ^{[1
]}

Podkopaev, O. I. ^{[3
]}

机构：

[1] Novosibirsk State Tech Univ, Novosibirsk 630092, Russia

[2] RAS, Inst Inorgan Chem, Novosibirsk 630092, Russia

[3] OJSC Germanium, Krasnoyarsk 660027, Russia

来源：

JOURNAL OF CRYSTAL GROWTH | 2014年 / 401卷

关键词：

Defects; Czochralski method; LTG CZ; Semiconducting germanium; GROWTH;

D O I：

10.1016/j.jcrysgro.2014.01.072

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This paper considers the possibility of growth of dislocation free germanium single crystals. This is achieved by reducing the temperature gradients at the level of similar to K/cm and lower. Single germanium crystals 45-48 ram in diameter with a dislocation density of 10(2) cm(-2) were grown by a Low Thermal Gradient Czochralski technique (LTG CZ). (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：767 / 771

页数：5

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