The low thermal gradient CZ technique as a way of growing of dislocation-free germanium crystals

被引：11
|
作者：
Moskovskih, V. A. [1 ]
Kasimkin, P. V. [1 ]
Shlegel, V. N. [2 ]
Vasiliev, Y. V. [2 ]
Gridchin, V. A. [1 ]
Podkopaev, O. I. [3 ]
机构：
[1] Novosibirsk State Tech Univ, Novosibirsk 630092, Russia
[2] RAS, Inst Inorgan Chem, Novosibirsk 630092, Russia
[3] OJSC Germanium, Krasnoyarsk 660027, Russia
来源：
JOURNAL OF CRYSTAL GROWTH | 2014年 / 401卷
关键词：
Defects; Czochralski method; LTG CZ; Semiconducting germanium; GROWTH;
D O I：
10.1016/j.jcrysgro.2014.01.072
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
This paper considers the possibility of growth of dislocation free germanium single crystals. This is achieved by reducing the temperature gradients at the level of similar to K/cm and lower. Single germanium crystals 45-48 ram in diameter with a dislocation density of 10(2) cm(-2) were grown by a Low Thermal Gradient Czochralski technique (LTG CZ). (C) 2014 Elsevier B.V. All rights reserved.
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页码：767 / 771
页数：5
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