Studies of electron-phonon and phonon-phonon interactions in InN using ultrafast Raman spectroscopy

Subpicosecond time-resolved Raman spectroscopy has been employed to investigate electron-phonon interactions and phonon dynamics in InN. The electron-longitudinal optical phonon scattering rate and the decay dynamics of longitudinal optical phonons in InN have been directly measured. Our results indicate that hot-phonon effects can play an important role in the electron relaxation and transport in InN. The carrier dependence of the lifetime of the longitudinal optical phonons has also been measured. The results suggest that more theoretical work is needed to account for the dependence of the lifetime of longitudinal optical phonons on the photoexcited carrier density.