Evaluation of high and low activation resists for EUV lithography

被引：17
|
作者：
Thackeray, James W.
Nassar, Roger A.
Spear-Alfonso, Kathleen
Wallow, Tom
LaFontaine, Bruno
机构：
[1] Rohm & Haas Elect Mat, Marlborough, MA 01752 USA
[2] Adv Micro Devices Inc, Sunnyvale, CA 94088 USA
来源：
JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY | 2006年 / 19卷 / 04期
关键词：
chemically amplified resists; EUV lithography; outgassing; line edge roughness; resolution;
D O I：
10.2494/photopolymer.19.525
中图分类号：
O63 [高分子化学（高聚物）];
学科分类号：
070305 ; 080501 ; 081704 ;
摘要：
This paper reports our latest findings on the performance of high and low activation resists for EUV lithography. Both low and high activation resists show good capability down to 35 nm resolution, with acceptable LER and photospeed. These resists also show minimal outgassing of 3.4 x 10(12) molecules/cm(2) outgassed at EUV exposure, well below the maximum outgassing threshold. The best resist material found so far is a blend of high and low activation resist polymers. This material showed resolution to 32nm, photospeed of 18mJ/cm(2), with an acceptable process window at 35nm. The PEB sensitivity was extremely low, 0.25nm/degrees C. This resist also had minimal LER, 3 sigma, of 3mn for 40nm 1:1 lines and spaces.
引用
收藏
页码：525 / 531
页数：7
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