SiC device technology for high voltage and RF power applications

被引：0

作者：

Östling, M ^{[1
]}

Koo, SM ^{[1
]}

Lee, SK ^{[1
]}

Danielson, E ^{[1
]}

Domeij, M ^{[1
]}

Zetterling, CM ^{[1
]}

机构：

[1] Royal Inst Technol, KTH, Dept Microbiol & Informat Technol, S-16440 Kista, Sweden

来源：

2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS | 2002年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recently, Silicon carbide (SiC) has drawn considerable attention as a suitable semiconductor material for high power, high frequency, high temperature and radiation resistant devices. The commercialized substrates and the experimental device prototypes in SiC show the promises while the continued improvements in fabrication techniques are required for economically viable productions to be widespread. This paper reviews the progress and current issues in SiC device process technology and the state-of-the art SiC devices for high voltage and RF power applications.

引用

页码：31 / 39

页数：9

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