Effects of Ga Supply on the Growth of (11-22) AlN on m-Plane (10-10) Sapphire Substrates

被引：10
|
作者：
Jo, Masafumi [1 ]
Hirayama, Hideki [1 ]
机构：
[1] RIKEN, 2-1 Wako, Wako, Saitama 3510198, Japan
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2018年 / 255卷 / 05期
关键词：
AlN; crystal growth; gallium; MOCVD; sapphire; semipolar surfaces; 11(2)OVER-BAR2 AIN; MOVPE GROWTH; HETEROSTRUCTURES;
D O I：
10.1002/pssb.201700418
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Flat and high-quality semipolar AlN layers are crucial to realizing polarization-reduced deep-UV optical devices. We investigate the effects of Ga supply during the growth of semipolar AlN on m-plane sapphire with the aim to produce better surface morphology. Incorporation of Ga into AlN is negligibly small at high-temperature growth. The surface roughness significantly decreased with increasing the TMGa flow at a constant V/III ratio.
引用
收藏
页数：4
相关论文
共 50 条
  • [21] Anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using double AlN buffer layers
    Zhao, Guijuan
    Wang, Lianshan
    Yang, Shaoyan
    Li, Huijie
    Wei, Hongyuan
    Han, Dongyue
    Wang, Zhanguo
    SCIENTIFIC REPORTS, 2016, 6
  • [22] Self-assembled growth of inclined GaN nanorods on (10-10) m-plane sapphire using metal-organic chemical vapor deposition
    Chae, Sooryong
    Lee, Kyuseung
    Jang, Jongjin
    Min, Daehong
    Kim, Jaehwan
    Nam, Okhyun
    JOURNAL OF CRYSTAL GROWTH, 2015, 409 : 65 - 70
  • [23] GaN layer growth by HVPE on m-plane sapphire substrates
    Usikov, Alexander
    Shapovalov, Lisa
    Ivantsov, Vladimir
    Kovalenkov, Oleg
    Syrkin, Alexander
    Spiberg, Philippe
    Brown, Robert
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 2009, 6 : S321 - S324
  • [24] Impact of thermal treatment on the growth of semipolar AlN on m-plane sapphire
    Jo, Masafumi
    Morishita, Naoki
    Okada, Narihito
    Itokazu, Yuri
    Kamata, Norihiko
    Tadatomo, Kazuyuki
    Hirayama, Hideki
    AIP ADVANCES, 2018, 8 (10)
  • [25] Structural and optical characterization of (11-22) semipolar GaN on m-plane sapphire without low temperature buffer layer
    Lee, Sung-Nam
    Kim, K. K.
    Nam, O. H.
    Kim, J. H.
    Kim, H.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 2010, 7 (7-8):
  • [26] Embedded AlN/GaN multi-layer for enhanced crystal quality and surface morphology of semi-polar (11-22) GaN on m-plane sapphire
    Omar, Al-Zuhairi
    Shuhaimi, Ahmad
    Makinudin, Abdullah Haaziq Ahmad
    Khudus, Muhammad I. M. Abdul
    Supangat, Azzuliani
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2018, 86 : 1 - 7
  • [27] Influence of growth temperature and miscut angle of m-plane sapphire substrate on the semi-polar (11-22) AIN film grown by HVPE
    Maosong, Sun
    Ting, Liu
    Yong, Lu
    Shuxin, Tan
    Xu, Li
    Jicai, Zhang
    Wenhong, Sun
    FRONTIERS IN PHYSICS, 2022, 10
  • [28] Mechanical properties characterization of c-plane (0001) and m-plane (10-10) GaN by nanoindentation examination
    Fujikane, Masaki
    Inoue, Akira
    Yokogawa, Toshiya
    Nagao, Shijo
    Nowak, Roman
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 2010, 7 (7-8):
  • [29] Formation mechanism of (10-13) AlN twins on m-plane sapphire substrates at high temperature by hydride vapor phase epitaxy
    Li, Xu
    Salwa, Almazroi
    Liu, Ting
    Lu, Yong
    Zhang, Ji-Cai
    CRYSTENGCOMM, 2023, 25 (39) : 5560 - 5564
  • [30] Impact of 3D growth and SiNx interlayer on the quality of (11-22) semi-polar GaN grown on m-plane sapphire
    Xing, Kun
    Chen, Shirong
    Tao, Xiao
    Lee, Chiaan
    Wang, Jiangtao
    Xu, Qi
    Liang, Huaguo
    APPLIED PHYSICS EXPRESS, 2019, 12 (11)
12345