Effects of Ga Supply on the Growth of (11-22) AlN on m-Plane (10-10) Sapphire Substrates

被引：10

作者：

Jo, Masafumi ^{[1
]}

Hirayama, Hideki ^{[1
]}

机构：

[1] RIKEN, 2-1 Wako, Wako, Saitama 3510198, Japan

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2018年 / 255卷 / 05期

关键词：

AlN; crystal growth; gallium; MOCVD; sapphire; semipolar surfaces; 11(2)OVER-BAR2 AIN; MOVPE GROWTH; HETEROSTRUCTURES;

D O I：

10.1002/pssb.201700418

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Flat and high-quality semipolar AlN layers are crucial to realizing polarization-reduced deep-UV optical devices. We investigate the effects of Ga supply during the growth of semipolar AlN on m-plane sapphire with the aim to produce better surface morphology. Incorporation of Ga into AlN is negligibly small at high-temperature growth. The surface roughness significantly decreased with increasing the TMGa flow at a constant V/III ratio.

引用

页数：4

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