Device-grade amorphous silicon prepared by high-pressure plasma

The high-pressure plasma regime (similar to5 Torr) was investigated in order to break through the growth rate limit for device-grade hydrogenated amorphous silicon (a-Si:H) without increasing the substrate temperature. The growth rate was successfully increased up to similar to7 Angstrom/s while preserving quality. Controlling the electrode gap is important for utilizing high-pressure plasma, and the narrowest possible gap, below which plasma becomes unstable. is necessary to obtain high growth rates with the same high quality that is obtained at lower growth rates. The combination of high pressure and the narrowest possible electrode gap reduces the higher silane formation and enhances the generation of proper growth radicals such as SiH3. It is essential to suppress the influence of higher silane related radicals in the surface reactions for the film growth. This method allows device-grade a-Si:H to be produced at practical growth rates without increasing the substrate temperature, and contributes to the effective production of a-Si:H devices.