Noise phenomena in semiconductor transport

被引：0

作者：

Varani, L

机构：

[1] Ctr. d'Electron. Micro-O., CNRS UMR 5507, Université Montpellier II, F-34095 Montpellier Cédex 5, Place E. Bataillon

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1997年 / 204卷 / 01期

关键词：

D O I：

10.1002/1521-3951(199711)204:1<442::AID-PSSB442>3.0.CO;2-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Different aspects of fluctuation phenomena in semiconductors are recieved. After a brief recall of the basic theoretical properties. the main numerical technique to obtain noise spectra are described. The main attention is drawn to the extraction of microscopic physical information from noise properties. To this end, several cases of interest are described, namely: relation between noise and characteristic times of the system. decomposition of noise spectra, noise properties in devices, discussion of the concept of noise temperature and noise in ballistic systems.

引用

页码：442 / 449

页数：8

共 50 条

[21] Interaction of the Thermal and Concentration Nonequilibriums in a Bipolar Semiconductor: Linear Transport Phenomena
Yuri G. Gurevich
Igor Lashkevych
[J]. International Journal of Thermophysics, 2014, 35 : 375 - 381
[22] GENERAL THEORY OF TRANSPORT PHENOMENA IN A SEMICONDUCTOR WITH A STRONG ELECTRIC-FIELD
BRYKSIN, VV
FIRSOV, YA
[J]. SOVIET PHYSICS SOLID STATE,USSR, 1972, 13 (11): : 2729 - +
[23] ANOMALOUS TRANSPORT PHENOMENA OF PHOTO-ELECTRONS IN FERROMAGNETIC SEMICONDUCTOR EUO
KAJITA, K
MASUMI, T
REED, TB
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 43 (06) : 1892 - 1905
[24] Experimental evidence of mode competition phenomena on the feedback induced noise in semiconductor lasers
Yamada, M
Kanamori, A
Takayama, S
[J]. IEICE TRANSACTIONS ON ELECTRONICS, 1996, E79C (12) : 1766 - 1768
[25] Ground-semiconductor-ground guiding phenomena of noise coupling in CMOS substrate
Wu, Hsien-Hung
Tzuang, Ching-Kuang C.
[J]. 2007 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, 2007, : 83 - +
[26] Predictability of minimum noise in electron transport through a disordered semiconductor
Berman, GP
Doolen, GD
Nagaev, KE
Rehacek, J
[J]. PHYSICA D, 1999, 133 (1-4): : 18 - 22
[27] AMBIPOLAR TRANSPORT NOISE IN A SEMICONDUCTOR IN PRESENCE OF A MAGNETIC-FIELD
MALDONADO, CD
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) : 476 - 481
[28] Interference phenomena in scalar transport induced by a noise finite correlation time
Mazzino, A
Castiglione, P
[J]. EUROPHYSICS LETTERS, 1999, 45 (04): : 476 - 481
[29] TRANSPORT PHENOMENA IN THE ANTIFERROMAGNETIC SEMICONDUCTOR EUTE IN WEAK AND STRONG ELECTRIC-FIELDS
KOSTYLEV, VA
SAMOKHVALOV, AA
[J]. FIZIKA TVERDOGO TELA, 1990, 32 (06): : 1663 - 1666
[30] NON-EQUILIBRIUM PHONONS AND ELECTRONS, AND TRANSPORT PHENOMENA IN BOUNDED SEMICONDUCTOR SAMPLES
MASHKEVICH, OL
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (10): : 1134 - 1138

← 1 2 3 4 5 →