Improved size control of InP nanopyramids by selective-area flow rate modulation epitaxy

被引：9
|
作者：
Oga, R [1 ]
Yamamoto, S [1 ]
Ohzawa, I [1 ]
Fujiwara, Y [1 ]
Takeda, Y [1 ]
机构：
[1] Nagoya Univ, Grad Sch Engn, Dept Mat Sci & Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷
关键词：
low dimensional structures; nanostructures; organometallic vapor phase epitaxy; selective epitaxy;
D O I：
10.1016/S0022-0248(01)01882-6
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We propose the use of flow-rate modulation epitaxy (FME) to improve the size uniformity of InP nanopyramids formed with selective-area growth. InP nanopyramids with square base were successfully obtained under optimum growth conditions. High growth temperature enhances the formation of {1 1 1} facets, resulting in improvement of shape uniformity. InP nanopyramids formed by FME exhibited good size uniformity in comparison with those formed by conventional organometallic vapor-phase epitaxy. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：239 / 243
页数：5
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