Improved size control of InP nanopyramids by selective-area flow rate modulation epitaxy

被引：9
|
作者：
Oga, R [1 ]
Yamamoto, S [1 ]
Ohzawa, I [1 ]
Fujiwara, Y [1 ]
Takeda, Y [1 ]
机构：
[1] Nagoya Univ, Grad Sch Engn, Dept Mat Sci & Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷
关键词：
low dimensional structures; nanostructures; organometallic vapor phase epitaxy; selective epitaxy;
D O I：
10.1016/S0022-0248(01)01882-6
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We propose the use of flow-rate modulation epitaxy (FME) to improve the size uniformity of InP nanopyramids formed with selective-area growth. InP nanopyramids with square base were successfully obtained under optimum growth conditions. High growth temperature enhances the formation of {1 1 1} facets, resulting in improvement of shape uniformity. InP nanopyramids formed by FME exhibited good size uniformity in comparison with those formed by conventional organometallic vapor-phase epitaxy. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：239 / 243
页数：5
相关论文
共 50 条
  • [1] Growth temperature dependence of InP nanopyramids grown by selective-area flow rate modulation epitaxy
    Oga, R
    Lee, WS
    Yoshida, Y
    Fujiwara, Y
    Takeda, Y
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2003, 6 (5-6) : 477 - 480
  • [2] Droplet hetero-epitaxy of InAs quantum dots on InP nanopyramids formed by selective-area flow rate modulation epitaxy
    Oga, R
    Yamamoto, S
    Ohzawa, I
    Fujiwara, Y
    Takeda, Y
    2001 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2001, : 405 - 408
  • [3] Droplet hetero-epitaxy of InAs quantum structures on InP nanopyramids formed by selective-area flow rate modulation epitaxy
    Oga, R
    Yamamoto, S
    Ohzawa, I
    Fujiwara, Y
    Takeda, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (2B): : 1026 - 1029
  • [4] Impact of base size and shape on formation control of multifaceted InP nanopyramids by selective area metal organic vapor phase epitaxy
    Yuan, Jiayue
    Wang, Hao
    van Veldhoven, Peter J.
    Notzel, Richard
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (12)
  • [5] DEPENDENCE OF INP AND GAAS CHEMICAL BEAM EPITAXY GROWTH-RATE ON SUBSTRATE ORIENTATIONS - APPLICATIONS TO SELECTIVE-AREA EPITAXY
    LEGAY, P
    ALEXANDRE, F
    BENCHIMOL, JL
    HARMAND, JC
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 394 - 398
  • [6] InGaAlAs selective-area growth on an InP substrate by metalorganic vapor phase epitaxy
    Tsuchiya, T
    Shimizu, J
    Shirai, M
    Aoki, M
    2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2003, : 546 - 549
  • [7] Laser devices by selective-area epitaxy
    Lammert, RM
    Coleman, JJ
    OPTOELECTRONIC INTEGRATED CIRCUITS, 1997, 3006 : 2 - 14
  • [8] SELECTIVE-AREA EPITAXY AND ETCHING BY CHEMICAL BEAM EPITAXY
    TSANG, WT
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (06) : 1016 - 1022
  • [9] InGaAlAs selective-area growth on an InP substrate by metalorganic vapor-phase epitaxy
    Tsuchiya, T
    Shimizu, J
    Shirai, M
    Aoki, M
    JOURNAL OF CRYSTAL GROWTH, 2005, 276 (3-4) : 439 - 445
  • [10] SELECTIVE-AREA EPITAXY FOR GAAS-ON-INP OPTOELECTRONIC INTEGRATED-CIRCUITS (OEICS)
    OSULLIVAN, PJ
    ALLAN, DA
    BIRDSALL, P
    GILBERT, MJ
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (06) : 1179 - 1185
12345