Highly-sensitive NO2 Detection of ZnO Nanorods Grown by a Sonochemical Process

被引:8
|
作者
Park, Jonghyurk [1 ]
Oh, Ji-Young [1 ]
机构
[1] Elect & Telecommun Res Inst, Taejon 305700, South Korea
关键词
ZnO nanorod; Sonochemical synthesis; Metal oxide semiconductor; NO2 gas senor;
D O I
10.3938/jkps.55.1119
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Solution-based growth is utilized to grow ZnO nanorods at room temperature in a very efficient and cost-saving way to make a thin-film device. We fabricated a NO2-gas-sensitive ZnO-nanorod (NR) device by spin-coating a solution containing ZnO NRs on a patterned substrate and obtained good electrical properties having Ohmic contact between the ZnO NR, sensing layer and the metal electrodes. We also studied the gas-sensing property of ZnO-NR-based sensor under N-2 and dry air condition and confirmed that our sensor showed a very high sensitivity to NO2 gas with concentrations much below the sub-ppm level.
引用
收藏
页码:1119 / 1122
页数:4
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