Optical properties of GaN/AlxGa1-xN quantum wells

被引：15
|
作者：
Cingolani, R
Coli, G
Rinaldi, R
Calcagnile, L
Tang, H
Botchkarev, A
Kim, W
Salvador, A
Morkoc, H
机构：
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
来源：
PHYSICAL REVIEW B | 1997年 / 56卷 / 03期
关键词：
D O I：
10.1103/PhysRevB.56.1491
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The optical properties of GaN/AlxGa1-xN quantum wells have been investigated by means of various spectroscopic techniques. A detailed assessment of the electronic and excitonic states has been obtained by comparing the temperature and intensity dependent luminescence and luminescence excitation spectra to the calculated band alignment and confinement energies of the quantum well. Room temperature stimulated emission due to localized exciton states is demonstrated by magnetoluminescence experiments under a strong injection rate.
引用
收藏
页码：1491 / 1495
页数：5
相关论文
共 50 条
  • [21] AlN, GaN, AlxGa1-xN nanotubes and GaN/AlxGa1-xN nanotube heterojunctions
    de Almeida, James M.
    Kar, Tapas
    Piquini, Paulo
    PHYSICS LETTERS A, 2010, 374 (06) : 877 - 881
  • [22] Absorption spectroscopy and band structure in polarized GaN/AlxGa1-xN quantum wells
    Wetzel, C
    Kasumi, M
    Amano, H
    Akasaki, I
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2001, 183 (01): : 51 - 60
  • [23] Piezoresistivity of AlxGa1-xN layers and AlxGa1-xN/GaN heterostructures
    Eickhoff, M
    Ambacher, O
    Krötz, G
    Stutzmann, M
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (07) : 3383 - 3386
  • [24] Effects of different potential barriers on the structural and optical properties of GaN/AlxGa1-xN/GaN coupled multiquantum wells
    Park, Y.S.
    Park, C.M.
    Hwang, B.R.
    Im, Hyunsik
    Kang, T.W.
    Kim, Chang Soo
    Noh, Sam Kyu
    Journal of Applied Physics, 2006, 100 (02):
  • [25] Effects of different potential barriers on the structural and optical properties of GaN/AlxGa1-xN/GaN coupled multiquantum wells
    Park, Y. S.
    Park, C. M.
    Hwang, B. R.
    Im, Hyunsik
    Kang, T. W.
    Kim, Chang Soo
    Noh, Sam Kyu
    JOURNAL OF APPLIED PHYSICS, 2006, 100 (02)
  • [26] Well-width dependence of the quantum efficiencies of GaN/AlxGa1-xN multiple quantum wells
    Zeng, KC
    Li, J
    Lin, JY
    Jiang, HX
    APPLIED PHYSICS LETTERS, 2000, 76 (21) : 3040 - 3042
  • [27] Barrier-width dependence of quantum efficiencies of GaN/AlxGa1-xN multiple quantum wells
    Shin, E
    Li, J
    Lin, JY
    Jiang, HX
    APPLIED PHYSICS LETTERS, 2000, 77 (08) : 1170 - 1172
  • [28] Surface states in the AlxGa1-xN barrier in AlxGa1-xN/GaN heterostructures
    Liu, J
    Shen, B
    Wang, MJ
    Zhou, YG
    Chen, DJ
    Zhang, R
    Shi, Y
    Zheng, YD
    CHINESE PHYSICS LETTERS, 2004, 21 (01) : 170 - 172
  • [29] Electric field effects on the confinement properties of GaN/AlxGa1-xN zincblende and wurtzite nonabrupt quantum wells
    Wang, H
    Farias, GA
    Freire, VN
    BRAZILIAN JOURNAL OF PHYSICS, 1999, 29 (04) : 670 - 674
  • [30] Optical properties of AlxGa1-xN alloy
    Takeuchi, Katsuki
    Adachi, Sadao
    Ohtsuka, Kohji
    JOURNAL OF APPLIED PHYSICS, 2010, 107 (02)
12345