Influence of doping time on spatial distribution of luminescence intensity in ZnSe:Fe

被引：6

作者：

Kalinushkin, Viktor ^{[1
]}

Uvarov, Oleg ^{[1
]}

Mironov, Sergey ^{[1
]}

Nartov, Kirill ^{[2
,3
]}

Il'ichev, Nikolay ^{[1
]}

Studenikin, Mikhail ^{[1
]}

Gavrischuk, Evgeniy ^{[4
]}

Timofeeva, Natalia ^{[4
]}

Rodin, Sergey ^{[4
]}

Gladilin, Andrey ^{[1
]}

机构：

[1] Russian Acad Sci, Prokhorov Gen Phys Inst, Moscow 119991, Russia

[2] Lomonosov Moscow State Univ, Fac Fundamental Phys & Chem Engn, Moscow 119991, Russia

[3] RAS, Topchiev Inst Petrochem Synth, Moscow 119991, Russia

[4] Russian Acad Sci, Devyatykh Inst Chem High Pur Subst, Nizhnii Novgorod 603950, Russia

来源：

JOURNAL OF LUMINESCENCE | 2021年 / 231卷

基金：

俄罗斯科学基金会; 俄罗斯基础研究基金会;

关键词：

Semiconductor materials; Spatial distribution characteristics; Luminescence centers; Defect centers; PHOTOLUMINESCENCE; IRON; SPECTROSCOPY; DIFFUSION; CENTERS;

D O I：

10.1016/j.jlumin.2020.117795

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

For ZnSe crystals doped with Fe by a high-temperature diffusion technique, the influence of annealing time on the positions of strip-like areas with a high intensity of luminescence at wavelengths of 521 and 715 nm parallel to the doping surface is studied. It is found that the distance between the doping surface and the strip-like areas increases with increasing doping time. A good description of the results is obtained under the assumption of simultaneous diffusion of Fe ions and two different defect/impurity centers. The formation of spatial strip-like areas is shown to be a general phenomenon arising in the co-diffusion of several types of recombination centers.

引用

页数：5

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