New developments in gallium doped zinc oxide deposited on polymeric substrates by RF magnetron sputtering

被引：58

作者：

Fortunato, E ^{[1
]}

Gonçalves, A

Marques, A

Viana, A

Aguas, H

Pereira, L

Ferreira, I

Vilarinho, P

Martins, R

机构：

[1] Univ Nova Lisboa, Fac Sci & Technol, CENIMAT, Dept Mat Sci, P-2829516 Caparica, Portugal

[2] Univ Nova Lisboa, CEMOP, P-2829516 Caparica, Portugal

[3] Univ Lisbon, Fac Sci, SPM Lab, P-1794016 Lisbon, Portugal

[4] Univ Aveiro, CICECO, Dept Ceram & Glass Engn, P-3810193 Aveiro, Portugal

来源：

SURFACE & COATINGS TECHNOLOGY | 2004年 / 180卷

关键词：

gallium; zinc oxide; thin film; r.f. magnetron sputtering; transparent conductive oxide; polymeric substrates;

D O I：

10.1016/j.surfcoat.2003.10.025

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Gallium-doped zinc oxide (GZO) thin films have been deposited onto polyethylene naphthalate (PEN) substrates by r.f. magnetron sputtering at room temperature. The influence of the film thickness (from 70 to 890 nm) on the electrical, structural and morphological properties are presented. The lowest resistivity obtained was 5 x 10(-4) Omega cm with a Hall mobility of 13.7 cm(2)/Vs and a carrier concentration of 8.6 x 10(20) cm(-3). These values were obtained by passivating the surface of the polymer with a thin silicon dioxide, so preventing the moisture and oxygen permeation inside the film. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：20 / 25

页数：6

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