Fluorocarbon polymer-based photoresists for 157-nm lithography

被引：0

作者：

Fedynyshyn, TH ^{[1
]}

Mowers, WA ^{[1
]}

Kunz, RR ^{[1
]}

Sinta, RF ^{[1
]}

Sworin, M ^{[1
]}

Cabral, A ^{[1
]}

Curtin, J ^{[1
]}

机构：

[1] MIT, Lincoln Lab, Lexington, MA 02420 USA

来源：

POLYMERS FOR MICROELECTRONICS AND NANOELECTRONICS | 2004年 / 874卷

关键词：

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A series of fluorinated polymers derived from 4-hexafluoroisopropanol styrene were prepared and evaluated for potential use in 157-nm photoresists. Physical properties such as MW, T-g, thermal stability, and VUV absorbance were measured and contrasted. The nature of the blocking group has a large effect on all of the aforementioned properties. Several candidate polymers were formulated into resists and imaged at 157 run. The imaging results as well as the etch resistance are reported.

引用

页码：54 / 71

页数：18

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