Status of 157-nm optical lithography

被引:7
|
作者
Trybula, WJ [1 ]
机构
[1] SEMATECH, Austin, TX 78741 USA
关键词
157-nm optical lithography; 193-nm immersion; Production lithography;
D O I
10.1117/1.1860401
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes the status of 157-nm lithography in mid 2004. With the rapid rise of 193-nm immersion from a potential concept in early 2002 at SPIE, through its development,to scheduled delivery of early production tools in late 2004 and early 2005, 157-nm lithography has taken a backseat in the development of optical lithographic technology. While significant challenges were conquered during the 2000 through 2002 period, the development was too slow to prevent 157-nm from being eclipsed by 193-nm immersion. This work reviews the challenges that were identified and conquered during the development of 157-nm lithography. The jury is still out on potential application to production lithography, although the main development effort has been seriously scaled back. There are still issues that remain to be solved before the technology could evolve into a full manufacturing system. The answer to the question of whether it will evolve or not is left to the future to answer. (c) 2005 Society of Photo-Optical Instrumentation Engineers.
引用
收藏
页码:1 / 5
页数:5
相关论文
共 50 条
  • [1] Optical lithography with 157-nm technology
    Modderman, T
    Jasper, H
    Boom, H
    Uitterdijk, T
    Dana, S
    Sewell, H
    O'Neil, T
    Mulkens, J
    Brunotte, M
    Mecking, B
    Gruner, T
    OPTICAL MICROLITHOGRAPHY XVII, PTS 1-3, 2004, 5377 : 816 - 826
  • [2] Status and critical challenges for 157-nm lithography
    Ronse, K
    De Bisschop, P
    Goethals, AM
    Hermans, J
    Jonckheere, R
    Light, S
    Okoroanyanwu, U
    Watso, R
    McAfferty, D
    Ivaldi, J
    Oneil, T
    Sewell, H
    MICROELECTRONIC ENGINEERING, 2004, 73-4 : 5 - 10
  • [3] 157-nm lithography
    不详
    IEEE MICRO, 2001, 21 (04) : 11 - 11
  • [4] Marathon evaluation of optical materials for 157-nm lithography
    Liberman, V
    Rothschild, M
    Efremow, NN
    Palmacci, ST
    Sedlacek, JHC
    Grenville, A
    Orvek, K
    JOURNAL OF MICROLITHOGRAPHY MICROFABRICATION AND MICROSYSTEMS, 2003, 2 (01): : 19 - 26
  • [5] Marathon evaluation of optical materials for 157-nm lithography
    Liberman, V
    Rothschild, A
    Efremow, NN
    Palmacci, ST
    Sedlacek, JHC
    Van Peski, C
    Orvek, K
    OPTICAL MICROLITHOGRAPHY XIV, PTS 1 AND 2, 2001, 4346 : 45 - 51
  • [6] Laser cleaning of optical elements in 157-nm lithography
    Bloomstein, TM
    Rothschild, M
    Liberman, V
    Hardy, D
    Efremow, NN
    Palmacci, ST
    OPTICAL MICROLITHOGRAPHY XIII, PTS 1 AND 2, 2000, 4000 : 1537 - 1545
  • [7] Review of technology for 157-nm lithography
    Bates, AK
    Rothschild, M
    Bloomstein, TM
    Fedynyshyn, TH
    Kunz, RR
    Liberman, V
    Switkes, M
    IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 2001, 45 (05) : 605 - 614
  • [8] Fluoroaromatic resists for 157-nm lithography
    Fedynyshyn, TH
    Kunz, RR
    Sinta, RF
    Sworin, M
    Mowers, WA
    Goodman, RB
    Cabral, A
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2002, 15 (04) : 655 - 666
  • [9] Fluoropolymer resists for 157-nm lithography
    Toriumi, M
    Shida, N
    Watanabe, H
    Yamazaki, T
    Ishikawa, S
    Itani, T
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIX, PTS 1 AND 2, 2002, 4690 : 191 - 199
  • [10] Challenges remain for 157-nm lithography
    McClay, J
    Fahey, T
    Lipson, M
    LASER FOCUS WORLD, 2001, 37 (07): : S10 - S13