Status of 157-nm optical lithography

被引:7
|
作者
Trybula, WJ [1 ]
机构
[1] SEMATECH, Austin, TX 78741 USA
关键词
157-nm optical lithography; 193-nm immersion; Production lithography;
D O I
10.1117/1.1860401
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes the status of 157-nm lithography in mid 2004. With the rapid rise of 193-nm immersion from a potential concept in early 2002 at SPIE, through its development,to scheduled delivery of early production tools in late 2004 and early 2005, 157-nm lithography has taken a backseat in the development of optical lithographic technology. While significant challenges were conquered during the 2000 through 2002 period, the development was too slow to prevent 157-nm from being eclipsed by 193-nm immersion. This work reviews the challenges that were identified and conquered during the development of 157-nm lithography. The jury is still out on potential application to production lithography, although the main development effort has been seriously scaled back. There are still issues that remain to be solved before the technology could evolve into a full manufacturing system. The answer to the question of whether it will evolve or not is left to the future to answer. (c) 2005 Society of Photo-Optical Instrumentation Engineers.
引用
收藏
页码:1 / 5
页数:5
相关论文
共 50 条
  • [31] Birefringence analysis improves 157-nm lithography optics
    Wang, BL
    Bates, K
    LASER FOCUS WORLD, 2000, 36 (11): : S7 - S10
  • [32] Critical dimension (CD) control in 157-nm lithography
    Hori, S
    Yoshihara, K
    Kyoda, F
    Matsui, F
    Funkawa, T
    Miyoshi, S
    Kawaguchi, E
    Itani, T
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XX, PTS 1 AND 2, 2003, 5039 : 1333 - 1342
  • [33] Application of a new BARC material for 157-nm lithography
    Shigematsu, M
    Irie, S
    Sakamoto, R
    Kishioka, T
    Mizusawa, K
    Nakajima, Y
    Fujii, K
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2004, 17 (04) : 665 - 670
  • [34] Synthesis of fluorinated materials for 193-nm immersion lithography and 157-nm lithography
    Yamashita, T
    Ishikawa, T
    Yoshida, T
    Hayamai, I
    Araki, T
    Aoyama, H
    Hagiwara, T
    Itani, T
    Fujii, K
    Advances in Resist Technology and Processing XXII, Pt 1 and 2, 2005, 5753 : 564 - 571
  • [35] Progress in 157-nm lithography development for 70-nm node
    Itani, T
    Wakamiya, W
    MICROELECTRONIC ENGINEERING, 2002, 61-2 : 49 - 55
  • [36] Limitation of the Kirchhoff boundary conditions for aerial image simulation in 157-nm optical lithography
    Yeung, MS
    Barouch, E
    IEEE ELECTRON DEVICE LETTERS, 2000, 21 (09) : 433 - 435
  • [37] Development of optical coatings for 157-nm lithography. I. Coating materials
    Niisaka, S
    Saito, T
    Saito, J
    Tanaka, A
    Matsumoto, A
    Otani, M
    Biro, R
    Ouchi, C
    Hasegawa, M
    Suzuki, Y
    Sone, K
    APPLIED OPTICS, 2002, 41 (16) : 3242 - 3247
  • [38] Performances of resists for 157-nm lithography based on monocyclic fluoropolymers
    Ishikawa, S
    Irie, S
    Itani, T
    Kawaguchi, Y
    Yokokoji, O
    Kodama, S
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XX, PTS 1 AND 2, 2003, 5039 : 580 - 588
  • [39] Fluoropolymer-based resist materials for 157-nm lithography
    Toriumi, M
    Shida, N
    Yamazaki, T
    Watanabe, H
    Ishikawa, S
    Itani, T
    MICROELECTRONIC ENGINEERING, 2002, 61-2 : 717 - 722
  • [40] A study of an organic bottom antireflective coating for 157-nm lithography
    Irie, S
    Shigematsu, M
    Sakamoto, R
    Mizusawa, K
    Nakajima, Y
    Itani, T
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2003, 16 (04) : 565 - 572