HIGH-GAIN WIDE-BANDWIDTH LOW NOISE AMPLIFIER MULTI-CHIP WAVEGUIDE MODULE AT V-BAND

被引：3

作者：

Tolani, Harshita ^{[1
]}

Rao, Ch. V. N. ^{[1
]}

机构：

[1] Indian Space Res Org, Microwave Remote Sensors Area, Ctr Space Applicat, Bengaluru, India

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2017年 / 59卷 / 02期

关键词：

low noise amplifier; monolithic millimeter-wave integrated circuit; microstrip-to-waveguide transition; microstrip-to-CPW transition; multi-chip waveguide module;

D O I：

10.1002/mop.30308

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low-noise, high-gain, wide-bandwidth multi-chip module has been developed at V-Band with WR-15 waveguide interface using commercial-off-the-shelf (COTS) Low Noise Amplifier (LNA) Monolithic Millimeter-wave Integrated Circuits (MMICs). Waveguide module design ensures there is minimal impact on noise figure and gain of MMICs due to integration on the module and it is rugged to sustain impact of fabrication/assembly tolerances. The realized six-stage LNA module has small-signal gain of 32-35 dB and room temperature noise figure ranging from 2.2 to 4.4 dB in 50-60 GHz frequency band. The module design has been simulated using 3D electromagnetic solver High Frequency Structure Simulator (HFSS). (C) 2016 Wiley Periodicals, Inc.

引用

页码：380 / 384

页数：6

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