Study of the Characteristics of Solid Phase Crystallized Bridged-Grain Poly-Si TFTs

被引：9
|
作者：
Zhou, Wei [1 ]
Zhao, Shuyun [2 ]
Chen, Rongsheng [1 ]
Zhang, Meng [1 ]
Ho, Jacob Y. L. [1 ]
Wong, Man [1 ]
Kwok, Hoi-Sing [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Partner State Key Lab, Hong Kong, Hong Kong, Peoples R China
[2] Hong Kong Univ Sci & Technol, Nanoelect Fabricat Facil, Hong Kong, Hong Kong, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2014年 / 61卷 / 05期
关键词：
Bridged grain (BG); polycrystalline silicon; thin-film transistors (TFTs); THIN-FILM TRANSISTORS; SEQUENTIAL LATERAL SOLIDIFICATION; NANOIMPRINT TECHNOLOGY; SILICON FILMS; PERFORMANCE; FABRICATION;
D O I：
10.1109/TED.2014.2308579
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, bridged-grain (BG) poly-Si thinfilm transistors (TFTs) were fabricated. The characteristics of BG poly-Si TFTs with different BG periods and implantation schemes were investigated. The poly-Si TFTs with optimized BG structures and doping schemes demonstrated greatly improved sub-threshold slope, threshold voltage, maximum field effect mobility, leakage current, and ON/OFF ratio.
引用
收藏
页码：1410 / 1416
页数：7
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