Effect of the diffusion anisotropy on the nucleation and growth of xenon on Cu(110)

被引：14

作者：

Dienwiebel, M

Zeppenfeld, P ^{[1
]}

Einfeld, J

Comsa, G

Picaud, F

Ramseyer, C

Girardet, C

机构：

[1] Johannes Kepler Univ Linz, Inst Expt Phys, A-4040 Linz, Austria

[2] FOM, Inst Atom & Mol Phys, NL-1098 SJ Amsterdam, Netherlands

[3] Forschungszentrum Julich, Inst Schicht & Ionentech, D-52425 Julich, Germany

[4] Univ Bonn, Inst Phys & Theoret Chem, D-53115 Bonn, Germany

[5] Univ Franche Comte, Phys Mol Lab, CNRS, UMR 6624,Fac Sci La Bouloie, F-25030 Besancon, France

来源：

SURFACE SCIENCE | 2000年 / 446卷 / 1-2期

关键词：

adsorption kinetics; atom-solid interactions; copper; growth; Monte Carlo simulations; noble gases; physical adsorption; scanning tunneling microscopy; stepped single crystal surfaces; surface diffusion;

D O I：

10.1016/S0039-6028(99)01131-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The growth of Xe on the corrugated Cu(110) surface has been investigated using scanning tunneling microscopy. It is shown that the diffusion anisotropy call lead to the stabilization of energetically unfavored structures and growth modes in two dimensions. In the present case the nucleation and growth occurs at [001]-oriented steps at low surface temperature (13 K) whereas at high higher temperatures (40 K) an almost exclusive decoration of the [110] step edges takes place. These results are explained by interaction calculations and Monte Carlo simulations, (C) 2000 Elsevier Science B,V. All rights reserved.

引用

页码：L113 / L119

页数：7

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