Characterization and growth of ZnSTe epilayers by hot-wall epitaxy

被引：15

作者：

Yu, YM

Nam, S

Rhee, JK

O, B ^{[1
]}

Lee, KS

Choi, YD

机构：

[1] Chungnam Natl Univ, Dept Phys, Taejon 305764, South Korea

[2] Mokwon Univ, Dept Phys, Taejon 301729, South Korea

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 210卷 / 04期

关键词：

ZnSTe; hot-wall epitaxy; energy gap;

D O I：

10.1016/S0022-0248(99)00738-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

ZnS1-xTex epilayers were grown on GaAs(1 0 0) substrates by hot-wall epitaxy in a wide range of Te composition. The Te composition was determined by Rutherford backscattering spectrometry and the lattice constant was measured by double-crystal rocking curve. It was found that the lattice of the epilayer matches well with that of the substrate at x = 0.37 as expected by Vegard's rule, and the energy gap was also determined as a function of Te composition by spectrophotometer. It showed that a quadratic relation with the composition: E-g(x) = 3.71 - 5.27x + 3.83x(2). Photoluminescence characteristics were also studied. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：521 / 526

页数：6

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