Self-organized strain engineering on GaAs (311)B:: Template formation for quantum dot nucleation control

被引：11

作者：

Gong, Q ^{[1
]}

Nötzel, R ^{[1
]}

Hamhuis, GJ ^{[1
]}

Eijkemans, TJ ^{[1
]}

Wolter, JH ^{[1
]}

机构：

[1] Eindhoven Univ Technol, COBRA Interuniv Res Inst, NL-5600 MB Eindhoven, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 17期

关键词：

D O I：

10.1063/1.1516637

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A matrix of closely packed cells develops during molecular-beam epitaxy of In0.35Ga0.65As on GaAs (311)B, due to strain-driven growth instability. The established lateral strain distribution generates a unique template that controls the nucleation and growth of InAs quantum dots (QDs). The QDs exhibit pronounced improvement of the structural and optical properties with efficient carrier transfer from the template. Thus, self-organization of a two-dimensionally connected quantum dot network is demonstrated. (C) 2002 American Institute of Physics.

引用

页码：3254 / 3256

页数：3

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